BSM200GA170DLCHOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to BSM200GA170DLCHOSA1

BSM200GA170DLCHOSA1 is a 6th generation IGBT module developed and manufactured by SEMIKRON, a leading manufacturer of power electronics solutions. It is designed specifically for applications that require high-power, fast switching and low switching losses, such as home appliances, electric drives, motor controls, medium-power frequency converter, welding and traction applications.

Application Field of BSM200GA170DLCHOSA1

BSM200GA170DLCHOSA1 is designed for applications that require high-power, fast switching and low switching losses, such as home appliances, electric drives, motor controls, medium-power frequency converter, welding and traction applications.

The high-power capabilities, fast switching speeds and low switching losses of the BSM200GA170DLCHOSA1 are achieved through its advanced 6th generation IGBT, advanced process technologies and optimized packaging design. The module is equipped with a rated current of 200 A, a collector-emitter voltage up to 1700 V, a maximum collector current of 250 A (with appropriate heatsinking), a maximum junction temperature of 175°C, and a maximum junction-emitter saturation voltage of 1.7 V.

The BSM200GA170DLCHOSA1 has a wide range of applications, and can be used in home appliances, electric drives, motor controls, medium-power frequency converters, and welding and traction applications, among others.

Working Principle of BSM200GA170DLCHOSA1

BSM200GA170DLCHOSA1 is a 6th generation insulated-gate bipolar transistor (IGBT) module. The working principle of the IGBT module is based on the principles of both the insulated gate field-effect transistor (IGFET) and the bipolar junction transistor (BJT).

In the IGBT structure, the channels of the two transistors, the IGFET and the BJT, are integrated into a single device. This allows for the device to offer the high current-handling capability of a BJT and the high-switching performance of an IGFET.

When the IGBT is turned on, the current-carrying channel between the collector and the emitter is formed. The voltage across the collector-emitter terminals is then equivalent to the collector-emitter breakdown voltage, while the current flowing through it is equal to the voltage continuously applied to the gate. When the IGBT is turned off, no current is able to flow through the transistor as the gate voltage is now zero.

The IGBT is a versatile device, offering wide output voltage and current ranges, ultrahigh switching speeds, high breakdown voltage ratings, low drive current requirements, and low switching losses. These make it an ideal choice for applications such as power conversion, industrial motor control and automotive applications.

BSM200GA170DLCHOSA1 is a 6th generation IGBT module, specifically designed to offer high-power and fast switching capabilities with low switching losses. Its applications are mainly in power conversion, industrial motor control and automotive applications.

The specific data is subject to PDF, and the above content is for reference