BSM75GAL120DN2HOSA1

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Introduction

The BSM75GAL120DN2HOSA1 is an insulated-gate bipolar transistor (IGBT) module. The device is used in various industrial applications that require high-power switching because it combines the advantages of both bipolar junction transistors and MOSFETs. It has a high power-handling capability, low on-state voltage drop, minimal switching loss, and minimal gate drive power requirements. The device also features an integrated state-of-the-art short circuit protection module which makes it highly reliable.

Application Field

The BSM75GAL120DN2HOSA1 IGBT module is ideal for applications that require continuous, high-current conduction and economical switching. It is used in various industrial applications such as motor drives, welding machines, AC-DC power conversion, aircraft power conversion, HVAC, UPS systems, traction systems, and industrial high power switching. In addition, its high electromagnetic interference (EMI) performance makes it suitable for sensitive electronic devices.

Working Principle

The power semiconductor module BSM75GAL120DN2HOSA1 is an IGBT device that consists of a MOSFET gate and a bipolar power transistor. Unlike conventional semiconductor components, an IGBT combines the low voltage and high current characteristics of a bipolar device and the high input resistance and low on-state voltage of a MOSFET. To turn the device ON, a low voltage is applied to the gate terminal and this allows current to flow from the collector to the emitter. To turn the device OFF, the voltage applied to the gate terminal is reduced, thus blocking the current flow from the collector to the emitter.

Features and Benefits

BSM75GAL120DN2HOSA1 IGBT module offers a number of advantages over traditional semiconductor components. Firstly, its high surge capacity helps the device to survive short circuit situations. Secondly, its low conduction losses result in high efficiency and low power consumption while its low switching losses allow for high switching frequencies. In addition, its low on-state voltage and gate drive power requirements significantly reduce power dissipation. Lastly, its softness in operation reduces EMI and switching stress, thus increasing the reliability of the whole system.

Conclusion

The BSM75GAL120DN2HOSA1 IGBT module is a highly reliable and cost-effective device that is suitable for various high-power switching applications. Its various advantages include high surge current capability, low switching and conduction losses, low on-state voltage, and soft operation. In addition, its integrated short circuit protection makes it even more reliable. Consequently, the BSM75GAL120DN2HOSA1 IGBT module is an ideal choice for industrial high-power switching applications.

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