Allicdata Part #: | BSM75GB170DN2HOSA1-ND |
Manufacturer Part#: |
BSM75GB170DN2HOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1700V 110A 625W MODULE |
More Detail: | IGBT Module Half Bridge 1700V 110A 625W Chassis M... |
DataSheet: | BSM75GB170DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 110A |
Power - Max: | 625W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 75A |
Input Capacitance (Cies) @ Vce: | 11nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The BSM75GB170DN2HOSA1 is a type of insulated gate bipolar transistor (IGBT) module, used in many high-power applications. As such, it paves the way for power efficiency and dependable performance. It is one of the most used devices in the field of power engineering, thanks to its reliable construction and fine power control capabilities.
The BSM75GB170DN2HOSA1 comes in a TO-247A package meaning that it is a double sided cooling package suitable for high current and high power applications. It offers up to 1220 Amps of peak current, making it one of the most powerful packages in the market. It is rated to deliver 1700 V at maximum operating temperature of 175 degrees Celsius.
It features optically isolated Gate Terminal that allows it to have independent Gate drive voltage ranging from 3V to 32V, which is great for controlling the power output of the module accurately. Additionally, the module also features an Over Current Detection Terminal, which helps shield the device from damage while still allowing it to remain operable even when the power output exceeds the specified levels.
The working principle of BSM75GB170DN2HOSA1 is quite simple. It acts as an electronic switch and conducts the current between its two terminals, the collector and the emitter. When voltage is applied to the gate terminal, it triggers the transistor to switch from an OFF state to an ON state. This change in state makes the module act like a closed switch, where current starts flowing from the collector to the emitter. As the voltage on the gate terminal is increased, the IGBT module continues to switch blocks of current until it reaches the desired level. From there on, the current remains constant as long as the gate voltage remains constant.
The applications of BSM75GB170DN2HOSA1 are many and varied. It is extremely useful in high-power applications such as power stations, factories, and other electrified areas. The device is also used in high-speed power supplies, frequency converters, and in precision control equipment. Additionally, it is also used in the automotive industry, particularly in on-board power supplies and vehicle control systems.
All in all, the BSM75GB170DN2HOSA1 is an immensely capable IGBT module that works with great precision and high power levels. Thanks to its ability to deliver high current and Voltage ratings, it is used in many applications in the power engineering and automotive industry. What’s more, its optically isolated Gate Terminal ensures smooth power delivery and precision control, making it well-suited for many high-power applications.
The specific data is subject to PDF, and the above content is for reference
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