Allicdata Part #: | BSM75GB120DN2HOSA1-ND |
Manufacturer Part#: |
BSM75GB120DN2HOSA1 |
Price: | $ 60.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 34MM-1 |
More Detail: | IGBT Module Half Bridge 1200V 105A 625W Chassis M... |
DataSheet: | BSM75GB120DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 54.91400 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 105A |
Power - Max: | 625W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1.5mA |
Input Capacitance (Cies) @ Vce: | 5.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs (Insulated Gate Bipolar Transistors) are a type of power semiconductor transistor used in a variety of applications. They are differentiated from standard BJTs (bipolar junction transistors) by their higher switching speed, higher current ratings, and lower conduction losses. The BSM75GB120DN2HOSA1 is an IGBT module made by Infineon Technologies which can be used in a variety of applications. In this article, we will discuss the application field and working principle of the BSM75GB120DN2HOSA1.The BSM75GB120DN2HOSA1 is an IGBT module made by Infineon Technologies. It is a part of the CoolMOS family of transistors and is designed to operate at a maximum collector-emitter voltage of 1200 V, with a maximum current rating of 75 A. The module is suitable for applications such as air-conditioners, motor controls, and wind turbines. It is also often used in automotive power electronics and consumer power electronics, due to its reliable performance.The BSM75GB120DN2HOSA1 is a three-phase, insulated-gate bipolar transistor (IGBT) module. It is designed with a half-bridge topology that allows for bi-directional current flow. The module is driven by an activation signal, which can be applied either at the gate terminal or at the collector-emitter terminal. Additionally, the module has built-in protection components, such as a temperature sensor and a fast-recovery diode, which protect the module from overcurrent and overheating.The working principle of the BSM75GB120DN2HOSA1 module is based on the principle of controlled avalanche breakdown. When an electric field of sufficient strength is applied to the gate, a depletion region is created within the semiconductor material. This depletion region results in an increase in resistance, which allows current to be switched off or on depending on the applied gate voltage. When the applied voltage is reversed, the device enters its linear mode, where it acts as an amplifier.The BSM75GB120DN2HOSA1 module is a reliable and efficient device that provides high switching speeds and low power losses. This makes it suitable for a variety of applications, including air-conditioners, motor control, and automotive power electronics. Additionally, its integrated protective components make it safe to use in harsh environments. The module provides high current and voltage ratings, making it a good choice for applications that require fast switching speeds or high load currents.Overall, the BSM75GB120DN2HOSA1 module is an excellent choice for a variety of applications. Its robust design and reliable performance make it suitable for both consumer and industrial applications. With its high current and voltage ratings and integrated protective components, the module is the perfect choice for applications that require reliable and efficient power delivery.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSM75GB60DLCHOSA1 | Infineon Tec... | 43.74 $ | 1000 | IGBT MODULE 600V 100AIGBT... |
BSM75GAL120DN2HOSA1 | Infineon Tec... | 54.42 $ | 1000 | IGBT 2 MED POWER 34MM-1IG... |
BSM75GAR120DN2HOSA1 | Infineon Tec... | 54.42 $ | 1000 | IGBT 2 MED POWER 34MM-1IG... |
BSM75GB120DLCHOSA1 | Infineon Tec... | 57.24 $ | 1000 | IGBT 2 MED POWER 34MM-1IG... |
BSM75GB120DN2HOSA1 | Infineon Tec... | 60.41 $ | 1000 | IGBT 2 MED POWER 34MM-1IG... |
BSM75GD60DLCBOSA1 | Infineon Tec... | 86.46 $ | 1000 | IGBT 2 LOW POWER ECONO2-2... |
BSM75GP60BOSA1 | Infineon Tec... | 104.96 $ | 1000 | IGBT 2 LOW POWER ECONO3-3... |
BSM75GD120DN2BOSA1 | Infineon Tec... | 129.1 $ | 1000 | IGBT 2 LOW POWER ECONO3-1... |
BSM75GD120DLCBOSA1 | Infineon Tec... | 136.26 $ | 1000 | IGBT 2 LOW POWER ECONO3-1... |
BSM75GB170DN2HOSA1 | Infineon Tec... | 0.0 $ | 1000 | IGBT 1700V 110A 625W MODU... |
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
POWER MODULE - IGBTIGBT Module Trench Fi...
PWR MODULEIGBT Module
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...