Allicdata Part #: | BSM75GB60DLCHOSA1-ND |
Manufacturer Part#: |
BSM75GB60DLCHOSA1 |
Price: | $ 43.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 600V 100A |
More Detail: | IGBT Module Single 600V 100A 355W Chassis Mount M... |
DataSheet: | BSM75GB60DLCHOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 39.76620 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 355W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 75A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 3.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction
The BSM75GB60DLCHOSA1 is a module developed by Infineon Technologies. The module is a semiconductor switching device composed of an Insulated Gate Bipolar Transistor (IGBT) and associated passive components packaged together in a metal case to facilitate its use. The module is suitable for frequency converters, uninterruptible power supplies, motor control, and many other high performance switch mode applications.
Application Field
The BSM75GB60DLCHOSA1 is primarily targeted for use in inverter applications. The module is used in switch mode power supplies, servo drives, uninterruptible power supplies (UPSs), dc-dc converter-connected inverters and other drive applications. It can also be used in regenerative braking systems, static switches, and power converters. The module is designed to handle up to 600V and can transfer up to 75A current with a switching frequency of 30 KHz. It can be used with a wide range of PWM control signals, and is optimized for use with FSRFS16F/TH2S logic control.
Working Principle
The BSM75GB60DLCHOSA1 consists of two IGBTs connected in parallel and two antiparallel diodes. The IGBTs are thyristors equipped with a gate control input. When the gate input is activated, the IGBTs turn on and current flow can commence. When the gate input is deactivated, the IGBTs turn off and the current flow is interrupted. The antiparallel diodes help protect against current over shoots by providing a direct path for current flow when the IGBTs are off. The module offers relatively low switching losses and fast switching speeds due to its unique design.
Summary
In summary, the BSM75GB60DLCHOSA1 is a module developed by Infineon Technologies. It is composed of two IGBTs connected in parallel and two antiparallel diodes. The module is designed for use in switch mode applications such as uninterruptible power supplies, motor control, and inverters. It is capable of handling up to 600V with a switching frequency of 30 KHz. The IGBTs are thyristors equipped with a gate control input, and the antiparallel diodes provide protection against current overshoots. The module offers relatively low switching losses and fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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