BSM75GD120DN2BOSA1

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The BSM75GD120DN2BOSA1 devices are a family of insulated gate bipolar transistor (IGBT) modules from Infineon Technologies. As a member of the CoolSET™ family, it is designed to meet the requirements of applications where high efficiency, compact size, and a minimum of external components are necessary. It offers a combination of high speed, low on-state losses, and low switching losses to deliver high performance and great power saving capabilities to system designers.

The BSM75GD120DN2BOSA1 module is constructed with a combination of technology and package components, including one IGBT chip, a fast diode, an FRD, a dual diode, and an aluminum nitride (AlN) substrate. All components are integrated into a module package with a simple pinout, making it easy to use in any application with a minimum of external components.

The module is used in a variety of applications, including motor control, power converters, white goods, and uninterruptible power supplies (UPS) systems. The device is used in applications where a low on-state voltage drop is needed. Additionally, this type of module is suitable for applications where both fast switching and low conduction losses are critical features.

The BSM75GD120DN2BOSA1 devices have a maximum operating junction temperature of 175°C and an isolation voltage rating of 1500V. The module has a peak repetitive reverse voltage of 1500V, making it suitable for high power motor drives. The module is available in the standard D2PAK package, with a peak on-state current rating of 120A and a peak recovery dv/dt of 450V/µs.

The BSM75GD120DN2BOSA1 module utilizes an Insulated Gate Bipolar Transistor (IGBT) to provide the switching necessary to control the current flowing in a circuit. An IGBT is a type of power semiconductor device that combines the best features of both MOSFET and BJT transistors by combining the low on-state resistance and fast switching of a MOSFET with the high current carrying capability of a BJT. It uses a voltage signal to control the turn on/off of the gate, allowing the gate to control the switching on/off current of the device.

The working principle of the BSM75GD120DN2BOSA1 module is based on a conventional half bridge topology. The IGBT of the module, when turned off blocks the current flow and when turned on allows current flow in either direction. A fast diode repairs the reverse current of the IGBT and a FRD provides the current during the turn-off of the primary switch. The dual diode suppresses the current from inductive loads, such as those found in motor control applications. The module requires an aluminum nitride (AlN) substrate for optimal power dissipation performance.

In today’s highly competitive market, companies are looking for components and solutions that provide low cost, high performance and reliability. By using the BSM75GD120DN2BOSA1, companies can achieve these objectives and help them to stay ahead of their competition. The device offers a combination of features, including high speed, low on-state losses, and low switching losses, that make it an ideal solution for the modern applications.

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