BSM75GD60DLCBOSA1 Allicdata Electronics
Allicdata Part #:

BSM75GD60DLCBOSA1-ND

Manufacturer Part#:

BSM75GD60DLCBOSA1

Price: $ 86.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 2 LOW POWER ECONO2-2
More Detail: IGBT Module Full Bridge 600V 95A 330W Chassis Mou...
DataSheet: BSM75GD60DLCBOSA1 datasheetBSM75GD60DLCBOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 78.59460
Stock 1000Can Ship Immediately
$ 86.46
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 95A
Power - Max: 330W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The BSM75GD60DLCBOSA1 is a field-stop insulated gate bipolar transistor module (IGBT) with a number of distinct features. It is an ideal choice for medium and high power applications, such as welding or induction heating. This module has a rated collector emitter voltage of 600 volts, a maximum collector emitter voltage of 1200 volts and a maximum collector current of 75 amperes. It can also be used in other applications requiring a high voltage, such as motor drives and traction systems.

The working principle of the BSM75GD60DLCBOSA1 module is based on the use of an IGBT to control current flow between the collector and emitter. This type of transistor is created by combining the advantages of both bipolar junction transistors (BJTs) and MOSFETs. An IGBT can effectively control current flow between the collector and emitter, using a gate to switch between an “on” state and an “off” state. This makes it suitable for applications such as motor drives, induction heating, and welding.

The BSM75GD60DLCBOSA1 module also offers a number of advantages over other types of transistors. It has a fast switching time due to its low gate drive voltage, and its low gate drive power makes it more efficient. It is highly stable and reliable, with a long lifetime and excellent thermal characteristics. Its low switching losses also make it a good choice for power electronics applications.

The BSM75GD60DLCBOSA1 module can be used in a variety of applications, including: motor drives, induction heating, welding, and traction systems. It is an excellent choice for application in medium and high power applications, since it is a reliable, high-performance device. Its fast switching time and low gate drive power make it suitable for a wide range of applications, from low to high power.

In summary, the BSM75GD60DLCBOSA1 is a field-stop insulated gate bipolar transistor module (IGBT) that provides a reliable, high-performance device for a wide range of applications. It has a fast switching time, low gate drive voltage and power, and excellent thermal characteristics. It is an ideal choice for medium and high power applications, such as welding and induction heating. It is also suitable for use in other applications requiring high voltage, such as motor drives and traction systems.

The specific data is subject to PDF, and the above content is for reference

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