BSP92P E6327

Vgs(th) (Max) @ Id:	2V @ 130µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	104pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.4nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	12 Ohm @ 260mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.8V, 10V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSP92P E6327 Application Field and Working Principle

The BSP92P E6327 is a high-performance insulated gate bipolar transistor (IGBT) developed by Infineon Technologies. It uses new advanced and robust silicon chip technology, providing superior performance over previous models. This device is ideal for high power applications such as motor drive, power factor correction, solar inverters and power supplies.This device has a wide range of applications including AC motor drives, AC motor control, Uninterruptible Power Supplies (UPS), server applications, Solar AC inverters, Data Center services, Industrial inverters, Programmable Logic Controllers, Light Electric Vehicles (LEV) and many more. It has excellent characteristics such as low conduction losses, high switching performance and enhanced robustness. The BSP92P E6327 belongs to the insulated gate bipolar transistor (IGBT) family of devices. IGBTs are a combination of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar transistors, where the former is used for voltage control and the latter for current conduction. This type of device allows power to be easily switched on and off. It is capable of handling high voltages and currents, so it is well suited for controlling power systems.The BSP92P E6327 is a single-gate device with two main terminals - the gate and the collector. The gate terminal is used to control the switching action of the device, while the collector terminal is responsible for the load current. The device can be driven by either a voltage or a current source. When a voltage is applied to the gate terminal, a current flows into the device, which allows the switching action to take place. This is known as the ‘on-state’ of the device. When the voltage is removed, the device stops conducting and the ‘off-state’ is achieved.When the device is in the ‘on-state’, the voltage applied to the gate terminal must be greater than the voltage applied to the collector terminal. In the ‘off-state’, the voltage must be smaller than the collector terminal voltage. In both states, the power supplied to the device is dissipated in the form of heat, so it is important to ensure that sufficient cooling is provided.The BSP92P E6327 is a high-performance IGBT device and is suitable for a number of different applications. Its wide voltage and current ranges make it suitable for a variety of applications, such as AC motor control, solar AC inverters and industrial inverters. Its low conduction losses combined with its high switching performance makes it an ideal choice for power factor correction and Uninterruptible Power Supplies (UPS). Its enhanced robustness allows it to withstand harsh environments, making it suitable for a variety of applications.

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