
Allicdata Part #: | BSR202NL6327HTSA1TR-ND |
Manufacturer Part#: |
BSR202NL6327HTSA1 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 3.8A SC-59 |
More Detail: | N-Channel 20V 3.8A (Ta) 500mW (Ta) Surface Mount P... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.11286 |
Vgs(th) (Max) @ Id: | 1.2V @ 30µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | PG-SC-59 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1147pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 4.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 3.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSR202NL6327HTSA1 transistor is a single N-channel HEXFET MOSFET. It is a MOS transistor, which is a type of transistor that has an insulated gate and comes in both P-channel and N-channel configurations. The BSR202NL6327HTSA1 is a N-channel MOS transistor, meaning that it has a P-type gate. The HEXFET MOSFET also boasts some impressive ratings, including an RDS(on) of 0.275 Ohms, an ID of 196A, a VGS of 10V, and a VDS of 20V.
The transistor\'s main application field is power electronics. It is designed for high power applications, such as motor drives and power supplies, where it is necessary for both high and low-side switching. The transistor is also capable of high-frequency switching in high-temperature environments. It has an operating temperature range of -65°C to 125°C and a maximum junction temperature of 150°C.
The transistor works by passing power through a N-type MOS channel between its source and drain. The gate voltage is used to open and close the channel, which allows power to flow through the transistor. When the gate voltage is increased, the N-type MOS channel gradually opens and allows more current to pass through the transistor. When the gate voltage is decreased, the N-type MOS channel gradually closes and restricts the amount of current flowing through the transistor.
One of the main benefits of using the BSR202NL6327HTSA1 is its low on-resistance. This low on-resistance helps to reduce the amount of power wasted in the form of heat during switching. It also helps to improve the efficiency of the power electronics circuit. This helps to reduce the power consumption of the system, making it more energy efficient.
Another advantage of using the BSR202NL6327HTSA1 is its high switching speed. This increased speed enables faster switching times, allowing for faster response times and higher performance. The transistor is also very rugged and reliable, making it well-suited for use in harsh environments.
The BSR202NL6327HTSA1 is an excellent choice for power electronics applications. Its low on-resistance and fast switching speed make it ideal for high-power and high-frequency applications, while its rugged construction makes it well-suited for use in harsh environments. The transistor is an ideal choice for a wide variety of power-related applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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BSR202NL6327HTSA1 | Infineon Tec... | 0.13 $ | 3000 | MOSFET N-CH 20V 3.8A SC-5... |
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