BSR33,135 Discrete Semiconductor Products

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The BSX33/135 is a medium power NPN silicon transistor available in the TO-39, TO-41 and TO-92 packages. The device was designed and released by Motorola, Inc. and is commonly used in consumer and commercial electronics. 

The BSX33/135 can be found in a variety of applications, from amplifying and switching, to low noise amplifying and functional circuits. It is generally used for low power radio frequency (RF) applications, and is one of the most popular transistors used in these applications. 

The BSX33/135 works as a PNP or NPN type transistor, and has an NPN type structure. It has an N- field effect region, a thin N+ layer and a P- substrate layer. The N- region has a high enough electronegativity so that the current carriers are attracted to it and can move freely through it. The thin N+ layer provides an electrical connection between the NFET region and the NPN emitter region. The P- substrate layer provides an electrical connection between the NFET and the base region. 

The BSX33/135 is a versatile device, and can be used in a variety of circuits. It can be used in amplifiers and switching circuits to provide high current gain and switching performance. Additionally, it can be used in low noise amplifiers, temperature sensors and other functional circuits, due to it\'s low noise characteristics and superior characteristics such as frequency responses. 

The BSX33/135 is the perfect choice for a wide range of applications. It is a versatile device, and is often used in consumer and commercial electronics. The device is highly reliable and has excellent performance characteristics, making it one of the most popular transistors used in low power RF applications. 

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