Allicdata Part #: | BSR316PL6327HTSA1TR-ND |
Manufacturer Part#: |
BSR316PL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 0.36A SC-59 |
More Detail: | P-Channel 100V 360mA (Ta) 500mW (Ta) Surface Mount... |
DataSheet: | BSR316PL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 170µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | PG-SC-59 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 165pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 360mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 360mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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A BSR316PL6327HTSA1 is a type of N-channel MOSFET. MOSFET is an acronym for Metal-Oxide-Semiconductor Field-Effect Transistor, and it is used in various electrical applications as a switch or an amplifier. The BSR316PL6327HTSA1 device is a high-performance MOSFET that is suitable for switching applications where fast switching time, low on-resistance, high input impedance and low power dissipation are required. It is designed to reduce switching losses and provide a safe and reliable switching experience.
The operating principle of the BSR316PL6327HTSA1 is determined by its internal structure, which consists of a source, a drain, a gate and a substrate. The source and the drain electrodes (or terminals) make contact with an N-type semiconductor material, while the gate is coated with a thin oxide layer. When an electrical voltage is applied to the gate, it pulls the negative/positive charge divisions from the substrate towards it and creates an electric field. This electric field produces a potential barrier between the electrodes, allowing the current to pass safely through the device with minimal losses.
The BSR316PL6327HTSA1 has a wide range of applications, which include switching, power control and amplification in both analog and digital signal processing systems. Additionally, it can be used in power supply circuits, voltage regulation, motor control, reversing systems, sound equipment and other related applications. Thanks to its low on-resistance and fast switching speed, it is specifically designed to reduce power dissipation and save energy. This device can also be used in medical equipment and various other high-reliability applications.
In summary, the BSR316PL6327HTSA1 is a type of N-channel MOSFET ideal for power control, amplification, voltage regulation and other related applications. It has a low on-resistance and fast switching speed which allow it to reduce power dissipation and improve system efficiency. The device’s internal structure consists of a source, a drain, a gate and a substrate. When an electrical voltage is applied, it creates an electric field which allows the current to pass safely while minimizing power losses. Thanks to its wide range of applications, the device is suitable for many different types of systems and applications, including but not limited to reversing systems, sound equipment and medical equipment.
The specific data is subject to PDF, and the above content is for reference
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