BSR33TA Allicdata Electronics

BSR33TA Discrete Semiconductor Products

Allicdata Part #:

BSR33TR-ND

Manufacturer Part#:

BSR33TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 80V 1A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 100MHz 1W Surf...
DataSheet: BSR33TA datasheetBSR33TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BSR33
Description

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Bipolar junction transistors (BJT) are a type of transistor that uses both electrons and holes as charge carriers. The BSR33TA is a single PNP BJT made of silicon. It is commonly used in amplifiers, RF radios, and logic circuits.

The BSR33TA is a very popular transistor due to its small size and low cost. It is capable of switching high voltages, has low noise, and a wide operating voltage range. The BSR33TA can also be used as an amplifier, switching element, and in linear applications.

The working principle of the BSR33TA is based on the regions of P and N type silicon doped with impurities. A PNP transistor contains a P-type silicon region between two N-type silicon regions. This PNP transistor has two terminals, the base and the collector.

The current flowing through the base of the BSR33TA is used to control the amount of current flowing through the collector. When a positive voltage is applied to the base, it causes a current to flow between the base and the collector, allowing the current to flow from the collector to the emitter.The amount of current that can flow through the collector is determined by the base current, which is controlled by the amount of voltage applied to the base.

The BSR33TA can be used to build many types of amplifiers, radios, and logic circuits. It can also be used in switching applications such as switch-mode power supplies and motor control circuits. It can also be used in linear applications such as linear amplifiers and oscillators.

In its simplest form, the BSR33TA can be used to amplify a signal from a low level to a high level. This is done by applying a low-level DC voltage to the base and a high-level DC voltage to the collector. When a higher voltage is applied to the base, the current flowing through the collector increases and the voltage gain of the amplifier is increased.

The BSR33TA is also used in RF radio applications. When a BSR33TA is used as an RF amplifier, it is placed in a series with an antenna and a tuned circuit. This configuration is used to amplify the RF signal and to provide an impedance matching between the antenna and the transistor\'s collector.

The BSR33TA can also be used in logic circuits as an electronic switch. It can be used to control the flow of current between two points. When a high voltage is applied to the base, the transistor turns on and the current is allowed to flow from the collector to the emitter. When the voltage applied to the base is lowered, the transistor turns off, preventing current from flowing from the collector to the emitter.

In conclusion, the BSR33TA is a very convenient and versatile transistor. It is inexpensive, small, and can be used to build many different types of amplifiers, radios, and logic circuits. It is especially useful for RF and switch-mode power supplies. The working principle of the BSR33TA is based on the P- and N-type silicon doped with impurities, and the base current is used to control the flow of the collector current.

The specific data is subject to PDF, and the above content is for reference

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