Allicdata Part #: | BSR315PL6327HTSA1TR-ND |
Manufacturer Part#: |
BSR315PL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 620MA SC-59 |
More Detail: | P-Channel 60V 620mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | BSR315PL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 160µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | PG-SC-59 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 176pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 620mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 620mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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BSR315PL6327HTSA1 is a single N-Channel depletion mode MOSFET with low on-state resistance and gate charge. It is designed with a gate-source voltage rating of -20V and an on-state drain current rating of -126A. This makes it highly suitable for low-voltage, high-current applications. It is often used in switching applications, as a driver or amplifier, as well as in applications requiring an accurate control of input power.
Application Field
The BSR315PL6327HTSA1 is a widely used MOSFET in multiple applications due to its high current and low-voltage ratings. It is widely used in DC-DC converters, motor control, and PFC circuits in DC-AC converters. It can also be found in Class D amplifiers, high-power switching applications and powering integrated circuits.
The device has been designed to handle high-current applications and as such it is also highly suitable for switching heavy-load relay, driving Automotive Body Controllers, and other similar applications. It can also be used in audio amplifiers, LED dimmers, and multiple other consumer applications.
Working Principle
The BSR315PL6327HTSA1 is an N-Channel depletion mode MOSFET. Its operation principle is based on the gate-electrode voltage. The gate voltage functions as a switch and controls the conduction of current from the source to the drain. When a positive voltage is applied on the gate electrode, it repels the electrons from the surface of the semiconductor. As a result, the resistance from the source to the drain decreases. On the other hand, when a negative voltage is applied on the gate electrode, the electrons will start to accumulate, increasing the resistance and preventing current from flowing. This is how the MOSFET is used to switch the current.
The main advantage of this MOSFET is its low on-state resistance, which allows more current to be driven through the device with a given voltage input. In addition, the device has a very low gate charge and a high voltage breakdown rating, which makes it highly suitable for lower voltage, high current applications.
Conclusion
The BSR315PL6327HTSA1 is a single N-Channel depletion mode MOSFET with low on-state resistance and gate charge. It has very low drive voltage requirements and a high voltage breakdown rating. It is widely used in applications such as digital logic, motor control, PFC circuits in DC-AC converters, Class D amplifiers, and low-voltage, high-current switching applications. The device has a very low on-state resistance and a low gate charge, which makes it highly suitable for these applications.
The specific data is subject to PDF, and the above content is for reference
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