BSR316PH6327XTSA1 Discrete Semiconductor Products

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The BSR316PH6327XTSA1 is an N-channel enhancement-mode metal-oxide semiconductor field effect transistor (NMOSFET). This power MOSFET threshold transistor is suitable for applications involving high voltage switching and power management.

The BSR316PH6327XTSA1 is designed to meet the needs of a wide range of applications, ranging from battery-powered devices to heavy-duty, high-current DC/DC power supply switching. It can be used in applications such as power converters, air-conditioners, automotive systems, computer power supplies, and UPS modules. The main characteristics of the transistor include its high breakdown voltage, low on-resistance, and fast switching speed.

The BSR316PH6327XTSA1 can be used as a low-side switch in applications such as DC/DC converters and high-current, high-frequency inverters. It can also be used as a high-side switch for applications such as LED lighting, automotive and home audio systems, cellular phones, and other electronic devices. In addition, this transistor can be used as a low-loss logic level switch in high-current, high-temperature applications.

The BSR316PH6327XTSA1 operates in enhancement-mode, meaning that current can flow between the source and drain when the voltage applied between the gate and source is lower than the threshold of the channel. This type of transistor is generally controlled by a gate voltage applied between the gate and source, and is used for switching, high-frequency AC amplification, and low-loss logic-level control. The threshold voltage is the minimum gate-source voltage that is required for the channel to "open".

The BSR316PH6327XTSA1 is an NMOSFET with a package size of 4x4mm. This transistor has an operating temperature range of -55~175°C, a drain-source breakdown voltage of 630V, a maximum drain current of 16A, a maximum drain-source on-resistance of 0.8m Wind drain-source off-resistance of 135 mWind, a maximum junction temperature of 175°C, and a maximum gate source voltage of 20V.

In summary, the BSR316PH6327XTSA1 is a high-voltage switching and power management NMOSFET with a wide range of applications. This transistor is suitable for applications that require fast switching, high breakdown voltages, and low on-resistance. It is well suited for low-side switching in DC/DC converters and high-current, high-frequency inverters, as well as for high-side switching in LED lighting, automotive, and home audio systems.

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