| Allicdata Part #: | BSR802NL6327HTSA1TR-ND |
| Manufacturer Part#: |
BSR802NL6327HTSA1 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 3.7A SC-59 |
| More Detail: | N-Channel 20V 3.7A (Ta) 500mW (Ta) Surface Mount P... |
| DataSheet: |  BSR802NL6327HTSA1 Datasheet/PDF |
| Quantity: | 12000 |
| 3000 +: | $ 0.11623 |
| Vgs(th) (Max) @ Id: | 750mV @ 30µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | PG-SC-59 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1447pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 2.5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 3.7A, 2.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSR802NL6327HTSA1 is a enhancement-mode Field Effect Transistor (FET) with a single N-channel architecture. It is manufactured by Winbond and can function as a complementary upper component of a MOSFET switch circuit. With its low voltage threshold and low on-resistance, BSR802NL6327HTSA1 is particularly suitable for power delivery applications.
The BSR802NL6327HTSA1, being a enhancement-type MOSFET, has a higher power efficiency compared to its p-channel counterpart, which explains its common applications such as AC converter, uninterruptible power supply, DC-DC converter, and HID lighting control. Its low on-resistance also makes it an ideal component for power switching needs that require a high current switcher.
When it comes to its working principle, the BSR802NL6327HTSA1 is an electrostatically controlled component. It has three terminals, which are the drain, gate, and source terminals. When a voltage difference exists between the gate and source, it will cause an electric field and further create a channel that allows current flow between the two electrodes. That makes the channel conductive and thus the component\'s output is enabled and controlled. This simple process forms the basis of how a MOSFET works.
The BSR802NL6327HTSA1 is also equipped with an active clamp circuit that allows the device to maintain the channel open state and thus enables the current flow even when the voltage difference between the gate and source is deactivated or reduced. This active clamp structure also enables easier gate control, since even small voltage changes can have a notable effect on the output.
The BSR802NL6327HTSA1 is a epitome of single N-channel FETs that are designed for low voltage and power delivery applications. As compared to its p-channel counterpart, it is clear that the BSR802NL6327HTSA1 is better suited for power delivery applications, since its high power efficiency gives it an edge over traditional p-channel MOSFETS. Its active clamp circuit also contributes significantly in terms of easier gate control. As such, this component is highly recommended for low voltage and power delivery applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BSR802NL6327HTSA1 | Infineon Tec... | 0.13 $ | 12000 | MOSFET N-CH 20V 3.7A SC-5... |
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