BST82,215 Discrete Semiconductor Products

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Introduction

The BST82,215 is a complimentary metal-oxide-semiconductor field-effect transistor (CMOSFET) designed for high speed circuits. It is a single transistor device and has a wide variety of applications, including power electronic devices, digital signal processing, audio amplifiers and radio-frequency circuits. This article will discuss the application field and working principle of the BST82,215.

Application field

The BST82,215 is a commonly used transistor for high speed circuits for a number of reasons. Firstly, the low power consumption of this device makes it ideal for battery powered applications such as portable electronics. Secondly, the high frequency and very low signal losses due to parasitic capacitance makes the BST82,215 suitable for signal transmission up to 1 GHz. Finally, the low gate leakage current make it an ideal choice for very low noise circuits such as in audio amplifiers or radio-frequency circuits.

The BST82,215 is also widely used for power switching applications. It can handle upwards of 10A of continuous current and 20A of peak current. This makes it suitable for switching power supplies, rectifiers and motor control circuits. This high power handling ability combined with its low on-state resistance makes it a popular choice for applications that require high switching speed and low power losses.

Working Principle

A MOSFET is a Field Effect Transistor that uses the voltage on its gate terminal to control the flow of current through the channel formed between its source and drain. The BST82,215 is a "Complementary MOSFET" (CMOSFET) which means that it has both an n-type MOSFET (NMOSFET) and a p-type MOSFET (PMOSFET). Both the n-type and the p-type MOSFETs have a gate terminal that is connected to the input signal and a drain and source that are connected to the output. By controlling the voltage on the gate of each MOSFET, the current can be switched on and off.

When no input signal is applied to the gate, the BST82,215 is in the off-state. Both the n-type and the p-type MOSFETs are in the "reverse-biased" state (voltage on the gate is more negative than the voltage on the source) and no current flows between the source and drain. When a signal is applied to the gate terminal, the MOSFETs are pulled into the "forward-biased" state (voltage on the gate is more positive than the voltage on the source) and current is allowed to flow between the source and the drain, turning on the BST82,215.

Conclusion

The BST82,215 is a high speed CMOSFET designed for a wide range of applications. Its low power consumption, wide range of frequencies and very low gate leakage current make it ideal for many different applications, from power electronics to audio amplifiers. Additionally, its high switching speed and low power losses make it a popular choice for power switching applications. By controlling the voltage on the gates of both the NMOSFET and the PMOSFET, the BST82,215 operates as a switch, turning current on and off.

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