BSZ300N15NS5ATMA1 Allicdata Electronics

BSZ300N15NS5ATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSZ300N15NS5ATMA1TR-ND

Manufacturer Part#:

BSZ300N15NS5ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 8TDSON
More Detail: N-Channel 150V 32A (Tc) 62.5W (Tc) Surface Mount P...
DataSheet: BSZ300N15NS5ATMA1 datasheetBSZ300N15NS5ATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.6V @ 32µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSZ300N15NS5ATMA1 is a type of field-effect transistor or FET . FETs are an important class of semiconductor device that work by controlling the flow of electrical current with a gate voltage. Specifically, this transistor is a part of the family of metal-oxide-semiconductor FETs, or MOSFETs, which are semiconductor devices used to regulate current flow in low-Noise amplifier circuits, high-speed switching circuits, power amplifiers, and more. It is designed with a single-gate structure, allowing it to switch more quickly than double-gate FETs. The BSZ300N15NS5ATMA1’s main field of application is high-side switching, which involves regulating the voltage between the source and ground. To this end, its datashhet has given its maximum Drain-Source voltages at 25V, maximum Drain Current at 16A, maximum Source-Drain Diode Forward Voltage at 2.4V and maximum Channel Temperature at 175oC.

The working principle of a FET like the BSZ300N15NS5ATMA1 is based on the movement of charge carriers – electrons, holes, and ions – within a semiconductor material. When the transistor is switched on, the current flows between the source and drain by the holes and electrons that are attracted to each other and move through the semiconductor material. This process is regulated by the voltage applied to the gate since it controls the attraction of the charge carriers. The voltage differential between the source and gate causes a widening of the depletion region at the drain, which results in a greater number of charge carriers and therefore increases the current flow.

The attractive field of the BSZ300N15NS5ATMA1 lies in its unique ability to manipulate current flow in a sensitive manner yet with enough strength to handle higher voltages. Its single-gate design helps reduce loss of current and makes it suitable for switching applications. It is particularly suited for high side driving, where it is exposed to the entire power voltage and the switch is placed between ground and the power source.

The BSZ300N15NS5ATMA1 is a powerful component in the field of transistors – FETs, MOSFETs – single, as it offers a reliable, easy-to-use solution for high-side switching and current regulation in low noise circuits. Its single-gate design makes it ideal for fast-switching applications and its wide range of voltage and current ratings make it suitable for a variety of uses, such as power amplifiers, switching regulators, and other applications that require sensitive yet strong control of current flow.

The specific data is subject to PDF, and the above content is for reference

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