Allicdata Part #: | BUZ80AIN-ND |
Manufacturer Part#: |
BUZ80A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 3.6A TO-220AB |
More Detail: | N-Channel 800V 3.6A (Tc) 100W (Tc) Through Hole TO... |
DataSheet: | BUZ80A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
Description
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The BUZ80A is a high-performance N-channel enhancement-mode MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It is designed for a variety of applications where high-speed switching, high current, low power consumption, and low noise performance is required. Although the BUZ80A is designed for a variety of applications, the most common applications for which it is used include switching power supplies, motor control, DC-DC converters, and timing circuits.The most important feature of the BUZ80A is its high switching speed. This is due to the fact that it has a high current capability and a wide variety of package options. The BUZ80A also has a low on-resistance, which makes it ideal for power switching applications. Moreover, its fast switching speed allows it to be used in high-frequency switching applications.The BUZ80A has a wide range of flexibility when it comes to its operating temperature range. This allows it to be used in a variety of situations, such as automotive and industrial applications. Moreover, its wide temperature range also makes it suitable for high voltage applications.The BUZ80A is available in several packages, including a surface mount design with a low profile package. This type of package offers superior heat dissipation, which is ideal for applications where the device is subjected to frequent power cycling.The BUZ80A is capable of switching current as high as 3A, and its power dissipation is also low. Since it has an output power rating of 4V, it is suitable for 4-V digital circuits. Moreover, its operating voltage is only 6V, making it suitable for low power applications.The BUZ80A has a low input capacitance and a fast response time, which makes it suitable for high frequency switching applications. Its high forward transfer admittance also allows it to achieve high performance.The BUZ80A works by being biased in the off-state at the gate voltage. This is known as the “enhancement-mode”. The on-state of the device is achieved when a positive gate voltage is applied. Once the gate voltage reaches a certain level, the device will turn on and allow current to pass through it.The BUZ80A is an efficient and versatile MOSFET with excellent performance. It is capable of handling large currents, and its low power dissipation makes it well suited for low power applications. Its wide range of application options, coupled with its fast switching performance, makes it a popular choice for many types of devices.
The specific data is subject to PDF, and the above content is for reference
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