BZX84B11-HE3-18 Allicdata Electronics
Allicdata Part #:

BZX84B11-HE3-18-ND

Manufacturer Part#:

BZX84B11-HE3-18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 11V 300MW SOT23-3
More Detail: Zener Diode 11V 300mW ±2% Surface Mount SOT-23-3
DataSheet: BZX84B11-HE3-18 datasheetBZX84B11-HE3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02126
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±2%
Power - Max: 300mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The BZX84B11-HE3-18 diode is a single zener diode with a maximum breakdown voltage of 12.3 volts and an approximate capacitance of 5.5pF. This diode is ideal for a multitude of applications, and is used to improve robustness and reduce power consumption. It can be used for power management and signal conditioning, as well as protection from transient surges.

The application field of the BZX84B11-HE3-18 diode is primarily in the protection against voltage transients. It can be used to divert, shunt, or limit the flow of energy from sudden and unexpected surges. This helps to protect electrical components from damage and adjacent components from hazardous voltages.For example, the BZX84B11-HE3-18 diode can be used as part of a power supply system. Its zener characteristics make it useful for voltage regulation and it can be used to reduce the effect of voltage transients on other components in the system. Additionally, its high capacitance and excellent current operation makes it suitable for applications such as power management and signal conditioning.

The working principle of the BZX84B11-HE3-18 diode is the same as all zener diodes. It functions by creating a built-in electric field between its semiconductor layers, which provides the diode its zener characteristics. The higher the applied voltage, the more the diode allows current to flow through it, until it reaches its maximum breakdown voltage of 12.3 volts. When the voltage exceeds the maximum breakdown voltage, the electric field within the diode becomes too strong for any more current to flow, and the reverse breakdown current is limited. This makes it useful for applications such as signal conditioning, voltage regulation, and protecting components against voltage transients.

In conclusion, the BZX84B11-HE3-18 diode is a single zener diode with a maximum breakdown voltage of 12.3 volts. It is a versatile diode, with applications in signal conditioning, power management, and protection against voltage transients. Its working principle is based on the zener effect, allowing the diode to accurately regulate the current it allows through it and protect against voltage transients.

The specific data is subject to PDF, and the above content is for reference

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