BZX84B75-G3-18

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	75V
Tolerance:	±2%
Power - Max:	300mW
Impedance (Max) (Zzt):	255 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 52.5V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

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Diodes - Zener - Single

The BZX84B75-G3-18 is a single Zener diode from the NXP semiconductor family which is designed for use in a wide variety of electronic applications. With its 75 V Zener voltage, low leakage current, and high power derating, this diode provides reliable voltage regulation in many low-power electrical circuits.This diode is a four-terminal, axially-interfaced device, with the standard TO-220 package. It is designed for operation over a wide temperature range and its shallow reverse recovery makes it suitable for widespread use in switching circuits.

Application Field

The BZX84B75-G3-18 is commonly used in low power voltage regulation circuits and is widely employed as a transient protection element. It is used in many power supply applications, such as protection against reverse polarity.This diode can also be used as an electromagnetic interference (EMI) filter in low voltage circuit designs. It is suitable for use in many EMI filter architectures, such as those found in automotive infotainment systems and LED lighting, and provides reliable protection against these types of interference.In addition, the BZX84B75-G3-18 is used in a variety of audio, analog and digital circuit designs. Its shallow reverse recovery time and low power dissipation provide reliable performance under a variety of conditions.

Working Principle

The BZX84B75-G3-18 is a Zener diode which utilizes the avalanche breakdown effect to operate in a special voltage-regulation mode. Its mechanism begins with an applied voltage, which causes a current to flow through the diode junction and the p-n junction in the diode to break down. This current then triggers a large drop in voltage, known as the Zener voltage, which is equal to the applied voltage plus the avalanche breakdown voltage.The rate of change of the Zener voltage with respect to the applied voltage is governed by the Zener impedance, which is the internal resistance of the diode. The Zener diode maintains a constant voltage until the applied voltage is higher than the Zener voltage.As the Zener diode conducts in the reverse direction, it dissipates a small amount of power proportional to the current passing through the diode. This power dissipation is known as the effective power dissipation and it is used to define the maximum operating power of the diode.

Conclusion

The BZX84B75-G3-18 is a Zener diode designed for a variety of electronic applications. Its shallow reverse recovery time and wide operating temperature range make it well-suited to a range of circuit designs. This diode is commonly used in low power voltage regulation circuits, protection against reverse polarity, as an EMI filter, and in many audio, analog and digital circuit designs. It is a simple and reliable device which consistently provides reliable performance.

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