BZX84C3V0T-7-F

The BZX84C3V0T-7-F is a single zener diode that’s used in many different applications, from industrial to military. It’s designed to provide a stable voltage source for use in switching power supplies, multi-tone test circuitry, voltage regulating systems, and other applications. The diode is made from a heavily doped gallium arsenide substrate with an aluminum nitride top layer, so it’s highly reliable, even in harsh environments.

The BZX84C3V0T-7-F has a maximum operating temperature of 150℃ and a breakdown voltage of 3.0V. Its low impedance and low capacitance ensures that it remains stable in fluctuating voltage environments. The diode is capable of achieving sustained pulses of up to 16mA with a maximum reverse recovery time of 25 nanoseconds.

The BZX84C3V0T-7-F operates on the principle of reverse biased avalanche breakdown. This process occurs when a large reverse electrical field accumulates within the diode junction, causing the depletion region to become thicker and eventually break down. The breakdown voltage is determined by the materials used in the diode, as well as the diameter and length of the depletion layer. During operation, the diode is reverse biased with a higher voltage than the breakdown voltage and it begins to conduct current. The current continues to flow until the voltage drops below the breakdown voltage, at which point the diode turns off.

The BZX84C3V0T-7-F is a versatile component that can be used in many applications. It can act as a voltage regulator, allowing the system to receive a continuous supply of clean power. It can also be used as a soft-start component to reduce inrush current and extend the life of capacitive and inductive loads. Additionally, it can be used in surge protection circuits to absorb electrical spikes and protect sensitive components. Furthermore, it can be used in signal conditioning applications to shape the input signal and extract the desired signal characteristics.