BZX85C18-T50A

Introduction

The BZX85C18-T50A is a single Zener diode manufactured by NXP Semiconductors. It provides a breakdown voltage of 18 volts with a maximum power rating of 50 milliwatts (mW). In addition, it has a temperature range from -55°C to +150°C and an electrical surge range of 500μA.

Application Field

The BZX85C18-T50A is used in many applications such as:

• Power-supply regulation
• Signal-clipping circuits
• Voltage-reference circuits
• Clamping and protection circuitry
• Energy-harvesting systems
• Voltage-division networks

Working Principle

Basically, a Zener diode is an electronic component which is well known for its simplicity and low-cost. It allows the current to flow in one direction and when the voltage across the Zener diode becomes greater than the breakdown voltage, the current rapidly changes direction and forms a break down voltage across the diode.The BZX85C18-T50A works like all other Zener Diodes. It has three terminals, the anode, the cathode and the gate. The anode is the input voltage and the cathode is where the current flows in the forward direction. When the anode voltage reaches the breakdown voltage, the Zener diode starts to break down, and a reverse current is created in the Zener diode which then flows through the gate terminal to protect against further increase in the anode voltage.

Conclusion

In short, the BZX85C18-T50A is a single Zener diode component manufactured by NXP Semiconductors with a breakdown voltage of 18 volts and a maximum power rating of 50 mW. It is suitable for use in many power-supply regulation, signal clipping circuits, voltage reference circuits, clamping and protection circuitry, energy harvesting systems and voltage-division networks. The basic working principle of the BZX85C18-T50A is the same as that of all other Zener diodes. When the anode voltage reaches the breakdown voltage, the diode starts to break down and a reverse current is formed in the diode.