BZX85C27_T50A

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	27V
Tolerance:	±7%
Power - Max:	1W
Impedance (Max) (Zzt):	30 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 19V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 200°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	BZX85C27

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The BZX85C27_T50A is a single Zener diode used for voltage regulation in many applications. It has a high power rating and low forward voltage drop, making it an ideal choice for use in applications where a minimum voltage drop is desired.The BZX85C27_T50A has a nominal breakdown voltage of 27V with a tolerance of ±2V and a power dissipation of 500mW. The device is also capable of handling a surge current of up to 62A, making it suitable for use in applications that require higher currents. The BZX85C27_T50A also features a low reverse current leakage, which is important in applications where a low voltage drop across the diode is desired.The BZX85C27_T50A is typically used in power supply circuits to regulate voltages at the output. When the input voltage exceeds the breakdown voltage, the Zener diode conducts the excess current and limits the output voltage to the desired level.The BZX85C27_T50A can also be used as a protective device in other types of circuits. It is able to effectively shut down high voltage spikes, and protect sensitive components from damage caused by overvoltage conditions.The working principle of the BZX85C27_T50A is based on the Zener effect, which is the ability of a PN junction to conduct current in reverse direction when the voltage applied across the junction exceeds a certain threshold. This threshold is known as the breakdown voltage and is typically determined by the design and construction of the device. When the applied voltage exceeds the breakdown voltage, the junction will enter a zone of avalanche breakdown and current will be conducted in both directions. The BZX85C27_T50A is based on a silicon PN junction and is designed to breakdown at a reverse voltage of 27V under nominal temperature and operating conditions. In order to ensure a reliable operation and maximum power dissipation, the device should be operated at a maximum temperature of +125℃ and at a maximum power dissipation of 500mW.The BZX85C27_T50A is typically used in circuits requiring regulation, protection or voltage referencing. It can be used to regulate the output voltage of power supplies, protect circuit components from overvoltage or provide a reference voltage for other circuit components.In conclusion, the BZX85C27_T50A is a single Zener diode that is suitable for use in multiple applications that require a minimum voltage drop and high power rating. It is based on the Zener effect and is able to conduct current in both directions when the applied voltage exceeds the breakdown voltage. The device is typically used to regulate voltage, protect components from overvoltage and provide a reference voltage for other components.

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