BZX85C3V0-TAP Allicdata Electronics
Allicdata Part #:

BZX85C3V0-TAP-ND

Manufacturer Part#:

BZX85C3V0-TAP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3V 1.3W DO41
More Detail: Zener Diode 3V 1.3W ±5% Through Hole DO-41
DataSheet: BZX85C3V0-TAP datasheetBZX85C3V0-TAP Datasheet/PDF
Quantity: 1000
25000 +: $ 0.02964
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±5%
Power - Max: 1.3W
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZX85C3V0-TAP diode is a single Zener diode developed by the well-established brand, BZX. It is a valuable component of electronics, as Zener diodes protect circuits from high voltages. Understanding the applications and working principle of the BZX85C3V0-TAP can help you make the right choice for your circuit board needs.

Applications

The BZX85C3V0-TAP is a powerful diode, specifically designed for applications requiring a fast response. It is built using a small package size and is UL approved. Due to its wide operating temperature range of -55 to 125 degrees Celsius and the fact that it can operate at a low voltage of 3.9V, this diode is suitable for a variety of uses, including:

  • Power supplies
  • Overvoltage protection
  • Surge protection
  • Circuit control

Working Principle

The BZX85C3V0-TAP functions by allowing electricity to pass in only one direction. To understand how it works, we first need to look at the diode’s structure. The diode consists of two regions: the P-region and the N-region. When a voltage is applied to the diode, current flow is forced through the device’s structure. Electrons are attracted to the P-region and repelled from the N-region. This movement of electrons causes a current to flow through the device, creating a conductive path.

When the applied voltage is lower than the breakdown voltage—or Zener voltage--of the device, current is limited and the device is said to be in a “reverse biased” state. In the reverse biased state, the diode acts with a very high resistance to limiting current flow. When the applied voltage reaches or exceeds the breakdown voltage, current is allowed to pass and the device is said to be in a “forward biased” state. In this state, the current is of a much higher magnitude, resulting in a conductive path for current flow.

The PN junction of the BZ85C3V0-TAP is designed to conduct in both the forward and reverse biasing states. This means that it is designed to allow current to flow in either direction. This makes it especially useful in applications where current needs to be allowed or limited in either direction.

Conclusion

The BZX85C3V0-TAP single Zener diode is a powerful and reliable device capable of operating in extreme temperatures. Its ability to conduct in both forward and reverse bias makes it ideal for applications requiring protection from overvoltage, as well as for current control. Understanding the applications and working principle of the BZX85C3V0-TAP is essential for proper selection and use of this diode.

The specific data is subject to PDF, and the above content is for reference

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