| Allicdata Part #: | 1727-5628-2-ND |
| Manufacturer Part#: |
BZX884-B33,315 |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | DIODE ZENER 33V 250MW SOD882 |
| More Detail: | Zener Diode 33V 250mW ±2% Surface Mount DFN1006-2 |
| DataSheet: |  BZX884-B33,315 Datasheet/PDF |
| Quantity: | 50000 |
| 10000 +: | $ 0.04092 |
| 30000 +: | $ 0.03836 |
| 50000 +: | $ 0.03401 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 33V |
| Tolerance: | ±2% |
| Power - Max: | 250mW |
| Impedance (Max) (Zzt): | 80 Ohms |
| Current - Reverse Leakage @ Vr: | 50nA @ 23.1V |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SOD-882 |
| Supplier Device Package: | DFN1006-2 |
| Base Part Number: | BZX884B33 |
Description
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BZX884-B33,315 is a kind of single Zener diodes which features 500mW of power and 3.3-3.15 volt breakdown voltage, suitable for a wide range of applications. They are especially suitable for applications such as supplying a stable reference voltage or as a part of voltage regulation circuitry.
The main feature of Zener diodes is the ability to maintain a steady voltage in the forward-biased region. This is because a Zener diode is designed to breakdown at a predetermined voltage. As current is passed through the diode, when the voltage surpasses the Zener voltage, the diode “breaks down”, allowing current to begin passing through the reverse direction.
It is important to remember that the maximum reverse peak current rating must not be exceeded in order to achieve the optimal performance. When selecting a Zener diode, the power rating should be determined to ensure that the diode is capable of dissipating the required amount of power.
BZX884-B33,315 has a static breakdown voltage of 3.3-3.15V and a power rating of 500mW, making it suitable for a wide range of applications. It can be used to supply a stable reference voltage or as an active component in voltage regulation circuitry.
The operating principle of BZX884-B33,315 is based on the PN junction diode structure. The PN junction diode consists of two different semiconductor materials that form a potential barrier when connected. When a forward voltage is applied across the diode, current will flow from the anode to the cathode.
When an excessive forward voltage is applied, the diode enters the breakdown region, allowing current to flow in the reverse direction. This reverse current flow is limited to a maximum value, which is known as the Zener breakdown current. The reverse breakdown voltage of a Zener diode is determined by its construction and doping concentration.
BZX884-B33,315 is a single Zener diodes, which makes it ideal for applications such as low-power macro-lithography and personal computers. It can be used to provide an efficient and reliable voltage regulation with its high breakdown voltage and power rating.
In conclusion, BZX884-B33,315 is a single Zener diode that is suitable for a wide range of applications. Its primary features are 500mW of power rating and a 3.3-3.15 volt breakdown voltage, making it an ideal choice for providing a stable voltage reference or as an active component in voltage regulation circuitry.
The specific data is subject to PDF, and the above content is for reference
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