
Allicdata Part #: | 1727-5636-2-ND |
Manufacturer Part#: |
BZX884-B47,315 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 47V 250MW SOD882 |
More Detail: | Zener Diode 47V 250mW ±2% Surface Mount DFN1006-2 |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.04092 |
30000 +: | $ 0.03836 |
50000 +: | $ 0.03401 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 47V |
Tolerance: | ±2% |
Power - Max: | 250mW |
Impedance (Max) (Zzt): | 170 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 32.9V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-882 |
Supplier Device Package: | DFN1006-2 |
Base Part Number: | BZX884B47 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BZX884-B47,315 application field and working principle
BZX884-B47,315 is a single zener diode that is used in various applications. It is made with a junction barrier which allows it to display various voltage levels with a variable range of 0.22 to 5.6 volts, at currents up to 500 mA. Zener diodes are generally used in radio communication devices and other applications that require a high degree of stability, security and control.
In a zener diode, the junction barrier is created by two layers of n-type silicon and p-type silicon, which create a depletion layer between them. The depletion layer acts like an insulator, stopping most current from flowing through the junction until a certain voltage is reached. When a corresponding voltage is applied on the anode side of the diode, the reverse biased depletion layer will decrease in width, allowing a small current to flow.
This action effectively places a resistor in series with the diode, limiting the amount of current that can pass through.
Once the voltage levels exceed the breakdown voltage of the junction, with the BZX884-B47,315 having a breakdown voltage of 4.7 volts, the depletion layer begins to saturate and a large amount of current can flow, causing the voltage to decrease. This is known as zener breakdown, and it occurs when the current is kept constant and the voltage continues to increase. In this state, the zener diode will act as a zener regulator, regulating the voltage levels of the circuit to the zener voltage.
The BZX884-B47,315 has a very low reverse current leakage, making it an ideal choice for general purpose applications. It is also available in a variety of packages for easy installation in a wide range of applications. Its high surge rating of 1A makes it suitable for switching applications where a large amount of current is needed for a short time.
The wide range of breakdown voltages available with the BZX884-B47,315 allows it to be used in a variety of applications such as signal protection, voltage regulation, and power supply design. Its low leakage current makes it an ideal choice for use in low-voltage or low-power circuits, while its high surge current capacity makes it suitable for applications requiring transient current.
The BZX884-B47,315 is a versatile zener diode that can be used in a wide variety of applications. Its high breakdown voltage and low leakage current make it an ideal choice for signal protection and voltage regulation, while its high surge rating makes it suitable for switching applications.
The specific data is subject to PDF, and the above content is for reference
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BZX84C2V7LT1 | ON Semicondu... | -- | 1000 | DIODE ZENER 2.7V 225MW SO... |
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