BZX884-C33,315 Allicdata Electronics
Allicdata Part #:

1727-2995-2-ND

Manufacturer Part#:

BZX884-C33,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 33V 250MW SOD882
More Detail: Zener Diode 33V 250mW ±5% Surface Mount DFN1006-2
DataSheet: BZX884-C33,315 datasheetBZX884-C33,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05043
30000 +: $ 0.04728
50000 +: $ 0.04191
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006-2
Base Part Number: BZX884C33
Description

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Diodes - Zener - Single

BZX884-C33, 315 is a single Zener diode designed for general purpose applications, able to handle up to 1W of power. It is packaged in a DO-35 which has a size of 3.2 x 1.5mm, making it suitable for space limiting applications or for use in tight design requirements. The diode features a reverse breakdown voltage of 33 volts with peak pulse power dissipation of 315mW. It has a maximum current of 1mA and at the rated voltage it can handle a maximum dissipation of 500mW.

Application Field

BZX884-C33, 315 is used primarily as a voltage regulator. It protects sensitive components by limiting the voltage to the safe maximum breakdown voltage. This device can also be used in voltage clamping application, current limiting and other protection circuits. The diode can also be utilized in switching circuits, snubber circuits, relays, as well as for signal and circuit isolation. Owing to its flexibility and remarkable performance, it has seen wide adoption in various industrial and consumer applications.

Working Principle

The BZX884-C33, 315 is a Zener diode which works on the principle of reverse breakdown of p-n junction. In wide reverse-bias state, the junction behaves like any other diode but the depletion region gets narrower due to higher electric field. This changes the properties of the p-n junction such that they conduct with minimal voltage. The breakdown voltage of this device is 33 volts with very low leakage current at high temperatures. It provides a stable reference voltage and current. The device is rated in terms of power dissipation and voltage breakdown.

Conclusion

The BZX884-C33, 315 is a single Zener diode with extraordinary properties. Owing to its superior performance and low power consumption, it is often used in voltage regulator, voltage clamping, current limiting and other protection applications. It has wide adoption in different industry applications owing to its effectiveness and stability.

The specific data is subject to PDF, and the above content is for reference

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