CAV25320VE-GT3

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	32Kb (4K x 8)
Clock Frequency:	10MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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<div style="text-align:justify"><p>The CAV25320VE-GT3 is a multi-level memory storage device specifically designed to facilitate high speed application development. This device enables multiple CPU\'s to seamlessly access shared memory locations simultaneously with no contention for data. It is engineered to provide a perfect blend of performance, economy and scalability to best meet the customer requirements.</p><p>The CAV25320VE-GT3 is equipped with a variety of features and options to accommodate the needs of diverse applications. It offers support for volume memory, memory management, virtual addressing, non-volatile memory, and multiple access containment zones. Built-in error detection, recovery and repair functions help maintain the integrity and reliability of the system. External memory expansion is available by leveraging off-the-shelf memory solutions.</p><p>The CAV25320VE-GT3 offers very low latency and is engineered to maximize system throughput. It utilizes advanced Multi-Level Memory Technology which makes access to large amounts of data feasible in a multi-processor environment. This ensures that multiple accesses to the same memory location can occur simultaneously with no contention.</p><p>The CAV25320VE-GT3 utilizes a hierarchical structure of memory modules to manage and store data. This hierarchical structure allows multiple independent applications to share a common interface to the underlying architecture, thereby enabling consistent and predictable behavior. The hierarchy operates in a Tree-ring configuration where each node can have as many as four memory modules. Each memory module can have from one to four data banks, allowing for a maximum potential capacity of each specific application up to 256 gigabytes (GB).</p><p>The CAV25320VE-GT3 is designed for reliable, high performance operation. It utilizes an enhanced error detection and correction algorithm that is applied across the entire memory system. This algorithm is designed to ensure that any errors that may occur are quickly detected and corrected. In addition, the device is equipped with an independent circuit that is used to detect any changes that may occur in the underlying physical structure of the memory system. Any changes that are detected are automatically corrected by the device.</p><p>The CAV25320VE-GT3 is highly scalable and supports up to 16 processor cores operating in parallel. It also supports a wide range of external memory devices, including DDR3-1333, and DDR3-1600, ECC SDRAM, DDR3L-1600, and DDR4-1866.</p><p>The CAV25320VE-GT3 is an ideal solution for distributed computing systems and data centers that require maximum throughput and scalability. It is designed to meet the demands of high performance applications and maximize system performance. By utilizing its advanced error detection and correction algorithm and superior scalability, the device ensures high data integrity and low latency.</p></div>

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