CAV25512YE-GT3

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	512Kb (64K x 8)
Clock Frequency:	10MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

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Memory

CAV25512YE-GT3 is a high-speed, low-power, low-noise 256K-bit CMOS static Random Access Memory (SRAM) organized as 32,768 words by 8 bits. It is ideal for a wide range of applications such as digital signal processing, telecommunications, data storage and embedded memory applications.This memory can be operated using a multiplexed address bus and low voltage differential signaling (LVDS) data I/O. It is designed to operate from a single 3.3 V power supply. The device can operate from -40 degrees Celsius to +85 degrees Celsius.The CAV25512YE-GT3 features a fast cycle time of 8ns, high-speed data rates, unbuffered address access port, low power dissipation, higher densities, and rugged construction. The fast cycle time allows it to provide faster random access to data and to process data faster. Additionally, its unbuffered address access port allows it to transfer data between its memory and external equipment in less than one half the access time of conventional SRAM.The device also has a low power dissipation capability and can operate from a single 3.3 V power supply. Its high density organization and intimate coupling between the memory array and logic, enables it to operate in a low power mode, making it perfect for applications requiring lower power dissipation.Its rugged construction consists of an advanced, ultra-low-k dielectric, monolithic and aluminum nitride packaging technologies allow for consistent reliable operation in severe environments.The CAV25512YE-GT3 provides an inherent low noise operation which makes it perfect for use in some high-noise environments and applications such as networking, communication and other high-speed applications.This memory is designed to work with asynchronous communication protocols, allowing it to communicate with other devices, such as microprocessors and others, without the need for complicated protocol interfacing or synchronous operations.Overall, the CAV25512YE-GT3 is designed to offer reliable, high-speed operation in a wide range of applications. With its fast cycle time, high density organization, low power dissipation, and superior noise immunity, this memory is sure to meet your needs.

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