Allicdata Part #: | CG2H40010F-ND |
Manufacturer Part#: |
CG2H40010F |
Price: | $ 40.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 440166 |
More Detail: | RF Mosfet HEMT 28V 100mA 8GHz 16.5dB 440166 |
DataSheet: | CG2H40010F Datasheet/PDF |
Quantity: | 236 |
1 +: | $ 36.84240 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 8GHz |
Gain: | 16.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | -- |
Voltage - Rated: | 120V |
Package / Case: | 440166 |
Supplier Device Package: | 440166 |
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The CG2H40010F is a kind of RF-MOSFET that has an application field encompassing, but not limited to, power amplifiers, voltage controlled oscillators and switches. It can be highly reliable while operating in high-power and low-noise conditions thanks to its built-in parasitic inductance, which can allow a proper power dissipation, and its bituminous epoxy resin packaging with copper-Land pattern to guarantee effective heat transfer from the chip to the body of the package.
In terms of its working principle, the CG2H40010F acts as a voltage-controlled source of current between its circular gate and source terminals, with a channel length and width of 0.3μm x 21μm. Its drain-source depletion layer is polarized with both a gate-source and gate-drain voltage to form an n-MOSFET, because of the use of silicon species with different concentrations and doping forms at the uppermost and lowermost sides of a non-planar substrate. This structure is also called a double-implanted non-planar process. Its drain current, or current across the drain-source channel, is determined by the amount of gate-to-drain voltage and drain-source voltage.
The CG2H40010F’s parasitic inductance, which is due to the current-carrying conductors within the structure, can be calculated from the formula of inductance and the current path from the gate to the drain of the MOSFET. The parasitic inductance ensures that current flows in a predictable and efficient manner, which is essential in obtaining good performance and reliability from the transistor. These inductances also provide some level of protection to the transistor, as the current will not increase much beyond the expected threshold when these inductances absorb any excess voltage, instead of the transistor itself.
The CG2H40010F has a maximum drain-source voltage of 40 V, a drain-to-source resistance of 27Ω, a drain-source capacitance of 1.14pF, a gate-source capacitance of 1pF and a gate-drain capacitance of 0.5pF. It has a thermal impedance of 62°C/W, and a power dissipation of up to 250mW. In terms of its frequency characteristics, it has a transition frequency of 10 GHz and a gain of 17.4 dB at 1 GHz, with an associated noise figure of 1.8 dB. Overall, the CG2H40010F is an effective and reliable device for any application that requires RF-MOSFET technology.
The specific data is subject to PDF, and the above content is for reference
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