Allicdata Part #: | CG2H80030D-GP4-ND |
Manufacturer Part#: |
CG2H80030D-GP4 |
Price: | $ 67.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V DIE |
More Detail: | RF Mosfet HEMT 28V 200mA 8GHz 16.5dB 30W Die |
DataSheet: | CG2H80030D-GP4 Datasheet/PDF |
Quantity: | 170 |
10 +: | $ 61.79670 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 8GHz |
Gain: | 16.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 30W |
Voltage - Rated: | 84V |
Package / Case: | Die |
Supplier Device Package: | Die |
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RF (radio frequency) transistors are typically classified as FETs (field effect transistors) and MOSFETs (metal oxide semiconductor field effect transistors). Different type of FETs and MOSFETs are used for different applications and devices. The CG2H80030D-GP4 is a three-terminal FET device that is tailored for high performance RF applications. This device is manufactured by ROHM Semiconductor, and is suitable for various wireless applications, such as mobile phones, base station amplifiers, and other portable electronic devices.
The CG2H80030D-GP4 is a N-channel, enhancement-mode FET device that uses a short channel and a hetero-junction structure to provide excellent RF performance and low losses. This device is designed to be capable of operation with supply voltages as low as 1.8V and current levels up to 30A. The device has a maximum frequency of operation of 30GHz and a gain compression point of 4GHz.
The CG2H80030D-GP4 is made up of two parts: the source and the drain. The source is the grounded side of the device and the drain is the active connection. The gate of the device is connected to a voltage source that controls the amount of current that is allowed to flow through it. When a positive voltage is applied to the gate, it creates an electric field which repels the electrons in the channel, allowing more current to flow.
When the gate voltage is increased, the electric field increases and more electrons are repelled, reducing the current flow. This is the basic principle of operation for a FET device. A MOSFET device is similar in operation, but uses a gate oxide layer to insulate the channel, allowing more precise control over the current flow.
The CG2H80030D-GP4 is designed to be used in high-performance RF applications. It has a high frequency response and very low losses at high frequencies. This makes it ideal for use in high-quality audio and video equipment, where high-performance is of the utmost importance. Additionally, the device has excellent RF performance when operating at very low power levels, making it ideal for applications such as mobile phones and other portable devices.
The CG2H80030D-GP4 is well-suited for use in a wide range of RF applications, from audio and video equipment to mobile phones and other portable devices. With its high performance and low losses, this device is sure to be a popular choice for RF applications in the near future.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
CG2H80030D-GP4 | Cree/Wolfspe... | 67.98 $ | 170 | RF MOSFET HEMT 28V DIERF ... |
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