CG2H80060D-GP4 Allicdata Electronics
Allicdata Part #:

CG2H80060D-GP4-ND

Manufacturer Part#:

CG2H80060D-GP4

Price: $ 69.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF DISCRETE
More Detail: RF Mosfet
DataSheet: CG2H80060D-GP4 datasheetCG2H80060D-GP4 Datasheet/PDF
Quantity: 50
1 +: $ 62.98740
Stock 50Can Ship Immediately
$ 69.29
Specifications
Series: *
Part Status: Active
Description

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The CG2H80060D-GP4 is a 600V 100A super junction power MOSFET that provides greatly improved performance and efficiency for a large number of applications. It has been designed using an advanced high voltage super junction process, which gives it superior performance over other power MOSFETs. It is an excellent choice for applications such as high frequency, power efficient amplifiers, motor control, and professional audio equipment.

Application Field

The CG2H80060D-GP4 is mainly used in high power applications. It is particularly suitable for high frequency switching, high voltage inverters, server, storage, and communications power systems, as well as any industrial, automotive, or consumer application that requires efficient, reliable power conversion and control. Additionally, it can be used in power supplies, lighting systems, audio and video systems, and other high performance applications.

The CG2H80060D-GP4’s superior performance makes it well-suited for use in demanding applications with high efficiency requirements. It has a low RDS(on) for low power loss and low switching noise. It also has a fast switching speed and can be used in high-frequency applications. Additionally, its low input capacitance, excellent dv/dt immunity and low Ciss makes it suitable for high reliable and high performance applications.

Working Principle

The CG2H80060D-GP4 is a super junction power MOSFET, which is a type of power FET (field-effect transistor) that uses a specially designed optimum SuperMESH a arrangement of drain and source regions, to optimize the performance and power capability of the device. This SuperMESH arrangement also ensures high performance, increased efficiency and reduced power loss.

The CG2H80060D-GP4 has an effective super junction structure, which reduces the on-state resistance and increases the drift region surface area, allowing for higher power transfer with reduced losses. This device also features low input capacitance and low gate charge for fast switching with low power loss. It has an improved threshold voltage for greater on/off control and optimized static and dynamic characteristics for superior performance. Additionally, it has a low gate doping for improved thermal stability, increased power capability and improved dv/dt immunity.

Conclusion

In conclusion, the CG2H80060D-GP4 is an excellent choice for applications requiring high frequency, power efficient amplifiers, motor control, and professional audio equipment. It is an ideal device for demanding high-efficiency applications such as those in server, storage, and communications power systems. The device’s superior performance and power handling capabilities make it an excellent choice for a variety of applications where high performance and reliability are required.

The specific data is subject to PDF, and the above content is for reference

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