Allicdata Part #: | CGH27030STR-ND |
Manufacturer Part#: |
CGH27030S |
Price: | $ 41.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 12DFN |
More Detail: | RF Mosfet HEMT 28V 200mA 6GHz 18.3dB 30W 12-DFN (4... |
DataSheet: | CGH27030S Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 37.35280 |
Series: | GaN |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 6GHz |
Gain: | 18.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 30W |
Voltage - Rated: | 84V |
Package / Case: | 12-VFDFN Exposed Pad |
Supplier Device Package: | 12-DFN (4x3) |
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A CGH27030S is a type of metal-oxide semiconductor field-effect transistor (MOSFET) that is specifically designed for use in radio-frequency applications. Because of its characteristic of low input capacitance, high gain, small size and low noise, it provides high levels of performance for very sensitive and low-power electronics that are necessary for radio frequency operations. In this article we will discuss the application fields and working principles of CGH27030S.
Application field
The CGH27030S is most commonly used in Radio Frequency (RF) applications, such as radio equipment, communication systems and low-power receivers. The CGH27030S is also frequently used to provide gain control in mixers and amplifiers, where its low-noise and low-input capacitance capabilities can provide high levels of performance for sensitive applications.
The CGH27030S is also commonly used for applications requiring RF attenuation, such as high-speed digital systems, where the transistor can provide the needed attenuation level to reduce the amount of noise generated by the circuit. In addition, the transistor is often used in low-power receivers, where its low noise capabilities can help to reduce the overall noise level of the receiver, resulting in improved reception.
The CGH27030S is also frequently utilized in antennas, as it is capable of providing the desired signal strength and signal-to-noise ratio required for transmission. Its small size also makes it suitable for use within mobile phones, where its low-noise capabilities can reduce signal interference and improve the overall quality of the signal.
Working Principles
The CGH27030S is a type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It works by utilizing an electric field to control the flow of electrons within an insulated semiconductor channel. When an electrical field is applied to the gate, it causes an electric field to be created within the channel, which in turn controls the amount of current that can flow through the channel.
The MOSFET works by manipulating the electric field within the channel, which can be used to either increase or decrease the amount of current that is flowing through it. In the CGH27030S, the input capacitance of the transistor is very low, which helps to increase the speed with which it can control the flow of electrons. In addition, the transistor’s low-noise capabilities help to reduce any additional noise that may be generated by the circuit.
The CGH27030S is a great example of how the Metal Oxide Semiconductor Field-Effect Transistor can be used to provide high levels of performance for very sensitive operations. Its low input capacitance, high gain, small size and low-noise capabilities make it perfect for use in RF applications, where its performance can help to improve the overall quality of the signal and transmission.
The specific data is subject to PDF, and the above content is for reference
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