Allicdata Part #: | CGH27060F-ND |
Manufacturer Part#: |
CGH27060F |
Price: | $ 131.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 440193 |
More Detail: | RF Mosfet HEMT 28V 300mA 3GHz 13dB 60W 440193 |
DataSheet: | CGH27060F Datasheet/PDF |
Quantity: | 75 |
1 +: | $ 119.27200 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 3GHz |
Gain: | 13dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 60W |
Voltage - Rated: | 84V |
Package / Case: | 440193 |
Supplier Device Package: | 440193 |
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CGH27060F Application Field and Working Principle
The CGH27060F is a type of Field Effect Transistor (FET) known as a Metal-Oxide Semiconductor FET (MOSFET). Specifically, it is a radio frequency (RF) MOSFET, meaning it is designed to operate in the radio frequency bandwidth. As such, it can be found in a number of applications where higher frequency operation is required.
In general, the CGH27060F can be used either as a on/off switch, an amplifier, or as a combined amplifier/switch. The type of application and the design of the circuit which includes it will dictate exactly how it will be used in any particular application. The most common application for this type of FET is in amplifier design.
To understand how the CGH27060F operates, it is important to understand how a FET works. A FET is basically a type of transistor which has two or three terminals depending on its design. One terminal is the "gate" and the other two are "source" and "drain" terminals. The voltage applied to the gate controls the amount of current that flows between the source and the drain terminals.
In the case of the CGH27060F, the gate voltage controls a conducting channel between the source and drain terminals using a very thin, high-resistance insulating layer of metal oxide. When the gate voltage is low, the thin barrier of metal oxide will resist the flow of electrons between the source and drain terminals, thus preventing current flow. When the gate voltage is increased, the thin barrier will begin to "break down" and the resistance between the source and drain terminals will decrease. This decrease in resistance will allow current to freely flow between the source and drain terminals.
The CGH27060F is rated for a maximum drain-source voltage of 120V and a drain current of 1.25A. Also, it is important to note that the CGH27060F uses a source-gate capacitance (Cds) and a gate-drain capacitance (Cgd) to control the current flow between the source and drain terminal. The capacitance values of these two components should be taken into consideration when designing an application circuit with the CGH27060F.
The CGH27060F has many potential applications in a number of high frequency electronic devices, such as radios, satellite receivers, and cell phones. It can be used as an amplifier, switch, or both. The choice of how it is used in any particular application will depend on the circuit design and the specific performance requirements. The CGH27060F has proven to be an excellent choice of FET for high frequency applications due to its low on-resistance and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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