Allicdata Part #: | CGH55015F1-ND |
Manufacturer Part#: |
CGH55015F1 |
Price: | $ 47.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 440196 |
More Detail: | RF Mosfet HEMT 28V 115mA 5.5GHz ~ 5.8GHz 11dB 15W ... |
DataSheet: | CGH55015F1 Datasheet/PDF |
Quantity: | 158 |
1 +: | $ 42.85260 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 5.5GHz ~ 5.8GHz |
Gain: | 11dB |
Voltage - Test: | 28V |
Current Rating: | 1.5A |
Noise Figure: | -- |
Current - Test: | 115mA |
Power - Output: | 15W |
Voltage - Rated: | 84V |
Package / Case: | 440196 |
Supplier Device Package: | 440196 |
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.Power Field Effect Transistor (FET) and Metal Oxide Semiconductor FET (MOSFET), are widely used in high power radio frequency (RF) applications. One of the most widely used RF power FETs is the CGH55015F1, which offers excellent performance and reliability in a variety of RF applications.
Features
The CGH55015F1 is a LDMOS FET with a drain rating of 150V and 150W CW power at 1.8GHz. It is available in an SOT-223 package with an integrated balun that eliminates the need for additional RF components. This device has a gate bias of 5V and a drain current of 13.4A. It has a saturated peak drain efficiency of up to 65% and a pulse-by-pulse peak power of >200W.
Applications
The CGH55015F1 is used in a variety of applications including, but not limited to, cellular and Wi-Fi, industrial RF, automatic meter reading, cordless phones and two-way radios. It is also used in consumer electronics and automotive applications.
Working Principle
The CGH55015F1 is a type of insulated-gate field effect transistor (IGFET) which uses the floating gate that enables it to maintain an input when the power source is removed. IGFETs have a transistor-like structure with a gate, source, and drain. IGFETs have a very low input capacitance due to the insulating oxide layer between the gate and channel. This helps reduce the power consumption in the device and reduces the switching time.
The gate of the IGFET device is used to control the flow of electrons from the source to the drain. When voltage is applied to the gate, it creates a depletion region at the interface between the gate and the channel which effectively seals off the drain from the source. When the gate voltage is removed, the electrons can flow freely between the source and the drain. This is how the CGH55015F1 works in practice.
Conclusion
The CGH55015F1 is an excellent choice for RF power applications due to its high power handling capacity, efficient operation, and solid reliability. This device offers excellent performance in a variety of applications such as cellular and Wi-Fi, industrial RF, automatic meter reading, cordless phones, two-way radios, consumer electronics, and automotive applications. By understanding the basic working principle of this device, we can better appreciate its features and take advantage of its performance.
The specific data is subject to PDF, and the above content is for reference
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