Allicdata Part #: | CGH55030F1-ND |
Manufacturer Part#: |
CGH55030F1 |
Price: | $ 85.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 440166 |
More Detail: | RF Mosfet HEMT 28V 250mA 5.5GHz ~ 5.8GHz 10dB 30W ... |
DataSheet: | CGH55030F1 Datasheet/PDF |
Quantity: | 105 |
1 +: | $ 77.49630 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 5.5GHz ~ 5.8GHz |
Gain: | 10dB |
Voltage - Test: | 28V |
Current Rating: | 3A |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 30W |
Voltage - Rated: | 84V |
Package / Case: | 440166 |
Supplier Device Package: | 440166 |
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CGH55030F1 is a RF MOSFET that belongs to a family of high-power Metal Oxide Semiconductor Field-Effect Transistor (MOSFETs) and is broadly used in many applications, particularly in the field of radio frequency (RF). A MOSFET is a three-terminal device that can be used as an electronic switch, amplifier or even an oscillator circuit in different applications. The CGH55030F1 utilizes a N-type of channel to pass current from the drain to the source, which is determined by the gate voltage. This MOSFET has high breakdown voltage and is designed for use in high-power applications.
CGH55030F1 is designed for use in different applications in the RF field such as amplifiers, oscillators, and receivers. The device was developed for operation in the RF frequency range of up to 6 GHz and it can handle high power up to 25 Watts. The device features low noise figure and high power efficiency, making it suitable for the high-performance applications. The device’s ability to regulate the current passing through it makes it ideal for its use in voltage amplifiers, frequency multipliers, and other high-power applications.
The working principle of CGH55030F1 is based on the principle of metal oxide semiconductor, where a MOSFET functions as a switch. The device is a three-terminal device, comprising of source, drain, and gate, which are responsible for passing current from drain to source when the gate voltage is applied. When bias voltage is applied to the gate, it forms an inversion layer around the drain, which, in turn, allows current to pass through it. The current passing through the device is controlled by the voltage applied to the gate and is regulated by the gate capacitance. Thus, when the gate voltage is increased, the current passing through the device increases.
CGH55030F1 finds application in many areas such as amplifiers, oscillators, and receivers. It is widely used in high-power applications and as a switch in high-performance applications. It is used in voltage amplifiers, frequency multipliers, and power supplies. It is also used as a rectifier in inertial navigation systems. Other applications include power meters and the control of high-voltage current.
CGH55030F1 is a three-terminal MOSFET device for the applications in the radio frequency field. It functions as a switch, and its current passing ability can be controlled by the gate voltage, which helps regulate the current flow from drain to the source. The device has high-power capability and is designed for operation at frequencies up to 6 GHz. Its applications range from amplifiers, oscillators, and receivers to power supplies, power meters, and inertial navigation systems.
The specific data is subject to PDF, and the above content is for reference
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