CGH55030F2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CGH55030F2 is a high-power, high-frequency GaN enhancement-mode HEMT transistor designed for commercial and industrial applications. It is designed for use in various applications including digital and analog radio systems, consumer electronics and data systems, test and measurement and military equipment. The device is a cost-effective and low power-consuming alternative to traditional transistors. It has a very low reverse current gate-source (Vgs) capability, making it ideal for applications requiring high-power and high-frequency operation. The device has a breakdown voltage of 80 volts and an supply voltage of -30 volts to +90 volts. It also features a low-current drive capability and a high maximum output power.

The CGH55030F2 uses a novel design to enable a higher frequency range of operation and wider gain bandwidth, making it ideal for applications that require more power and higher operating frequency. It is also one of the best-suited transistors for radio-frequency (RF) uses because of its high-speed operation and superior linearity. This enables it to be used in various digital and analog radio systems, consumer electronics and data systems, military equipment, and test and measurement.

The working principle of the CGH55030F2 is based on a field-effect transistor (FET). This type of transistor is composed of a source region, drain region and a gate region. As the name suggests, these three regions interact with each other in order to produce an electrical field effect. The source region of the FET is connected to a source of negative DC voltage. With each change in the voltage, this induces a field effect in the gate region, which in turn controls the current flowing between the source and the drain.

This transistor is also able to operate in a higher frequency range than other transistors. This is because of its physical structure and its advanced design, which allow it to handle a wide range of frequencies without any degradation of its performance. This allows it to be used in applications requiring high-frequency radio transmissions.

The CGH55030F2 has a very low reverse current gate-source (Vgs) capability, making it ideal for applications requiring high-power and high-frequency operation. It also has a low switch-on voltage, making it easy to use in devices such as signal amplifiers, data logger systems, audio amplifiers and many other digital signal processing operations. This provides a cost-effective and energy-efficient solution for a variety of applications.

All in all, the CGH55030F2 is a great transistor for RF uses in radio transmission and reception, as well as in other analog and digital applications. Its low switch-on voltage and its high maximum output power make it a great choice for the demanding high-power, high-frequency needs of many industries. Its cost-effectiveness and high performance make it an ideal transistor for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference