CGH60030D-GP4

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The CGH60030D-GP4 are a family of RF Field Effect Transistors (FETs) designed for a wide range of radio frequency applications. They offer high power density, excellent gain, low noise figure and low-cost production. The CGH60030D-GP4 is available in both single and dual configurations.

The CGH60030D-GP4 is primarily used in applications requiring high power in a compact size and minimal power consumption. These transistors are used in radios, radar systems, satellite and wireless communication equipment, point-to-point radios, land mobile radios, base stations, test and measurement equipment and amplifiers applications. These devices are ideal for all types of switched-mode amplifiers, including class B, C, and D.

The CGH60030D-GP4 is a GaN FET with a high current gain, high output impedance and low resistive heating loss. The device’s compact size gives designs a great level of flexibility. The small size ensures low parasitic capacitances for easy design, as well as minimises thermal stress. The transistor’s extended output capability and low losses allow for distortion-free operation, even at very low frequencies.

The working principle of the CGH60030D-GP4 is very simple. The gate and drain of the device are connected to opposite poles of a power supply. When an alternating current is applied to the gate, the current passes through the gate and is amplified by the FET\'s gain to produce an output at the drain. The output current can then be used to drive a load or other device, such as an amplifier. Additionally, the gate capacitance can be tuned to produce a desired frequency response.

The CGH60030D-GP4 is an extremely versatile device and can meet the needs of a variety of applications. Its capability to provide high power density, low noise figure and low cost production makes it the preferred choice for many applications. With its compact size, high current gain and low operating temperature, the CGH60030D-GP4 is sure to deliver reliable and dependable performance.

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