Allicdata Part #: | CGH60060D-GP4-ND |
Manufacturer Part#: |
CGH60060D-GP4 |
Price: | $ 69.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V DIE |
More Detail: | RF Mosfet HEMT 28V 400mA 6GHz 13dB 60W Die |
DataSheet: | CGH60060D-GP4 Datasheet/PDF |
Quantity: | 60 |
10 +: | $ 62.98740 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 6GHz |
Gain: | 13dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 60W |
Voltage - Rated: | 84V |
Package / Case: | Die |
Supplier Device Package: | Die |
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The CGH60060D-GP4 is a type of transistor with an RF field application. It is used in electronics and wireless communication applications, specifically in microwave and millimeter waves. The CGH60060D-GP4 is a GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor). It is an advanced version of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and provides high performance with low power consumption. This makes it perfect for use in applications such as Radios, TV, GPS, and more.
The CGH60060D-GP4 has a wide range of features that make it a great choice for various RF applications. It has the ability to operate at frequencies up to 60 GHz, with a +66 dBm output power, and a gain of 25 dB. It also has a low operating temperature and high breakdown voltage, which is ideal for microwave and millimeter wave applications. Additionally, it has a low noise figure and low power consumption, which makes it great for applications where high performance and low power are essential.
In addition to its RF applications, the CGH60060D-GP4 can also be used for power management applications. It is capable of delivering high current pulses, which can be used for various types of power supply regulation. This allows for precise control over current and voltage levels. The CGH60060D-GP4 is also capable of withstanding high temperatures, making it suitable for use in high-temperature environments.
The CGH60060D-GP4 works on the principle of a FET (Field Effect Transistor). It consists of four distinct terminals, which are the source, gate, drain, and body. The source is the input and receives an input signal, while the gate is the control signal input. The drain is the output and receives the signal after it has been processed, while the body connects the drain to the source. When a signal is applied to the gate, it will create a channel between the source and the drain, allowing current to flow between the two. The amount of current that is allowed to flow is regulated by changing the voltage applied to the gate, which is known as the gate-to-source voltage or VGS.
The CGH60060D-GP4 is an excellent choice for various applications due to its high performance and low cost. Its many features make it suitable for a wide range of RF and power management applications. It is capable of handling large currents and voltage levels with precise control, and it has excellent thermal characteristics. These features, coupled with its low power consumption, make it an ideal choice for most modern electronic applications.
The specific data is subject to PDF, and the above content is for reference
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