CGH60120D-GP4

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Transistors - FETs, MOSFETs - RF

CGH60120D-GP4 is a Gallium Nitride (GaN) high electron mobility transistor (HEMT) device from Panasonic. It is designed for radio frequency (RF) power amplifier applications ranging from 1MHz to 2GHz. The device is an enhancement mode device with a maximum drain current at 28V of 220mA and a maximum drain-source voltage of 40V.

The CGH60120D-GP4 is fabricated in a thermally enhanced 0.25um gate length GaN HEMT process, allowing for improved power density and higher efficiency than traditional Si or GaAs based devices. The device is optimized for mobile communication bands and has a very fast switching speed, with a turn-on time of only 18.5ns and a turn-off time of 13ns. This allows it to be used in higher efficiency RF power amplifier applications, such as military communication systems.

Application field

The main application field of the CGH60120D-GP4 HEMT is for radio frequency power amplifiers ranging from 1MHz to 2GHz. The device is optimized for use in mobile communication systems, both civilian and military, and is suitable for handheld and vehicular applications. It is also used for wireless infrastructure applications such as Wifi, cellular base station, and point-to-point communication systems.

Working Principle

The CGH60120D-GP4 is an enhancement mode device, which means that it provides gain when a voltage is applied to the gate terminal, allowing current to flow between the drain and source terminals. This is done by utilizing the high electron mobility of the GaN HEMT process, which increases the conduction speed and efficiency of the device. This allows the device to produce higher power amplitudes than traditional Si or GaAs based devices.

The CGH60120D-GP4 device has a very fast switching speed, with a turn-on time of only 18.5ns and a turn-off time of 13ns. This allows it to be used in higher efficiency RF power amplifier applications, as it is able to quickly switch between different power levels. Additionally, the CGH60120D-GP4 is optimized for mobile communication systems and is able to work in varying temperature and humidity ranges without compromising performance.

Conclusion

The CGH60120D-GP4 is a high performance GaN HEMT device from Panasonic, designed for radio frequency power amplifier applications ranging from 1MHz to 2GHz. The device is an enhancement mode device with a maximum drain current at 28V of 220mA and a maximum drain-source voltage of 40V. It is optimized for use in mobile communication systems, both civilian and military, and is suitable for handheld and vehicular applications. Additionally, the device is able to switch quickly between different power levels, allowing for higher efficiency and power density than traditional Si or GaAs based devices.

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