Allicdata Part #: | 835-1172-ND |
Manufacturer Part#: |
CM150DX-24S |
Price: | $ 80.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MODULE DUAL 150A 1200V |
More Detail: | IGBT Module Half Bridge 1200V 150A 1150W Module |
DataSheet: | CM150DX-24S Datasheet/PDF |
Quantity: | 4 |
1 +: | $ 73.01070 |
Series: | IGBTMOD™ |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 1150W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 15nF @ 10V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CM150DX-24S, part of the new range of CM150 ‘DirectFET’ modules from Fuji, is a state of the art IGBT/MOSFET module which is suitable for many applications. IGBTs have been widely used in today’s consumer electronics, while the new CM150DX-24S offers superior performance in terms of efficiency and reliability.
The CM150DX-24S module is an ideal choice for applications such as automotive, consumer, industrial and medical applications. The IGBT module has been designed to handle high power applications, up to 150A peak current. The module also features an integrated short circuit current limiting mechanism, which makes it suitable for controlling devices in demanding environments.
The CM150DX-24S is a three-phase, 30V module with a maximum continuous on-state current of 350A. The gate-source voltage is 15V and the drain-source voltage is 30V. The module also has an integrated temperature sensor, which can be used to monitor the internal module temperature. The IGBT module also has an integrated MOSFET with an on-state resistance at 25°C of 22 mΩ.
The CM150DX-24S has a forward conduction drop of 2.5V at 10A, and a high switching speed. It is designed for easy installation and has an extended temperature range of -45°C to 125°C.
The working principle of the CM150DX-24S is based on the principles of IGBTs, which are built with a metal-oxide-semiconductor field-effect transistor (MOSFET) and an insulated gate bipolar transistor (IGBT). The IGBTs are used to control the voltage and current of the device and are capable of switching high power with minimal losses. The module uses the same principles of operation as conventional IGBTs, but the new CM150DX-24S has superior characteristics, such as increased switching speeds and improved power loss characteristics.
The CM150DX-24S IGBT module is a highly efficient and reliable solution for applications requiring large currents and high voltages. It is suitable for use in automotive, consumer, industrial and medical applications, as well as many other applications where high power control and performance are required.
The specific data is subject to PDF, and the above content is for reference
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