CMPD914E TR Allicdata Electronics
Allicdata Part #:

CMPD914ETR-ND

Manufacturer Part#:

CMPD914E TR

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE GEN PURP 75V 250MA SOT23
More Detail: Diode Standard 75V 250mA Surface Mount SOT-23
DataSheet: CMPD914E TR datasheetCMPD914E TR Datasheet/PDF
Quantity: 15000
3000 +: $ 0.05027
6000 +: $ 0.04525
15000 +: $ 0.04022
30000 +: $ 0.03771
75000 +: $ 0.03352
Stock 15000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 970mV @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Description

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Diodes are electronic components used to regulate the flow of electricity. A single rectifier diode is designed to allow current to pass through it in one direction only, blocking the opposite flow. The single rectifier diode type CMPD914E TR is a high temperature device with an isolation voltage of 600V and a repetitive peak reverse voltage of 600V.

The CMPD914E TR application fields vary, depending on the design and power requirements. Examples of applications for the CMPD914E TR are rectification, clamp circuits, voltage doubling, voltage regulation, current regulation, controlling switching times, and surge protection.

The operating principles of the CMPD914E TR are based on the charge-carrier physics of semiconductor materials. A diode consists of a junction between two different types of semiconductor materials – an n-type and a p-type. The n-type material consists of an abundance of negatively charged particles, while the p-type material has an abundance of positively charged particles.

The CMPD914E TR diode also contains three layers, known as the anode, cathode, and depletion region. When a voltage is applied to the diode, a potential barrier is formed between the anode and cathode, known as the depletion region. This region restricts the flow of current from the anode to the cathode, which allows the device to act as a rectifier.

When the applied voltage is greater than the threshold voltage, the depletion region is forced to contract and current is allowed to flow between the anode and cathode.This is known as forward biasing and current flows in the forward direction only. When the applied voltage is lower than the threshold voltage, the depletion region expands, blocking the flow of current. This is known as reverse biasing and current will not pass in the reverse direction.

In summary, the CMPD914E single rectifier diode is an electronic component designed for applications requiring high temperature operation and an isolation voltage of 600V. Its application fields are numerous, ranging from rectification to voltage regulation. The working principle of the diode is based on the charge-carrier physics, which allows the device to act as a rectifier.

The specific data is subject to PDF, and the above content is for reference

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