CMPDM303NH TR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Package / Case:	SOT-23-3 Flat Leads
Supplier Device Package:	SOT-23F
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	350mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	590pF @ 10V
Vgs (Max):	12V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	40 mOhm @ 1.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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CMPDM303NH TR is a high-voltage, low-cracking voltage, N-channel enhancement-mode insulated gate field effect transistor (FET). It is designed for use in high current switching and high voltage power supply applications. This FET has a wide range of applications in the power supply, AC/DC converters, defense, industrial and consumer markets.The CMPDM303NH TR features a low on-state resistance and a high voltage breakdown voltage. This makes it suitable for applications such as the main output switch of high current inverters, AC/DC rectifiers, and high voltage lighting ballasts. The device also features a low gate-to-source and gate-to-drain input capacitance, which makes it suitable for high-speed applications such as quick-connect AC/DC converters and high frequency switching applications.The device is constructed from an N-channel insulated gate FET with a floating gate. This means that the gate insulation layer is sandwiched between the source and the drain region of the device, creating a capacitive coupling between them. A low gate-to-source and gate-to-drain input capacitance makes it particularly suitable for high frequency switching applications. This FET has a threshold voltage of 8V and operates within a wide range of temperatures from -55°C to +125°C. The CMPDM303NH TR also has an on-state resistance of 5 milli-ohms and a breakdown voltage of 400V. It also features a low gate-drain breakdown voltage of 9V, which minimizes gate-drain leakage currents. In addition, the device has a high drain-source breakdown voltage of 500V.The CMPDM303NH TR usually comes in a TO-220 package. This makes it easy to mount with other components and to provide insulation, making it suitable for use with exposed copper and copper-clad ground planes. The package is designed to provide high voltage isolation between the drain, source and gate terminals, providing additional protection from over voltages. In terms of working principle, the FET consists of three terminals: the gate, source and drain. When the gate voltage is applied, the electric field across the oxide layer deforms the electrons in the inversion layer at the interface. This causes the channel to be pinched off and the current begins to flow from the source to the drain. As the gate voltage is further increased, current flows more freely through the channel, increasing the overall on-state resistance of the device. When the FET is used in a high current switching application, the most important parameter is the drain-source voltage. This voltage determines the on-state resistance so that it can be configured to deliver the required current flow. In a high voltage power supply application, the CMPDM303NH TR can be used to create an isolated voltage regulator. This is achieved by connecting the device in a series-connected configuration between the input and output terminals. The device is then biased so that a voltage divider is created. The gate voltage of the device is set to a certain value so that a controlling voltage – or reference voltage – can be created to the output load. The regulating voltage is determined by the gate voltage and the FET on-state resistance.The CMPDM303NH TR is an ideal solution for high current switching and high voltage power supply applications. Its low on-state resistance and high voltage breakdown voltage make it suitable for use in AC/DC converters, high frequency switching applications, and even as a voltage regulator. Furthermore, its low gate-to-source and gate-to-drain input capacitance makes it a good choice for high speed switching applications. The TO-220 package provides good insulation and mounting for the device, making it easy to use and reliable.

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