Allicdata Part #: | CMPDM7002AGBK-ND |
Manufacturer Part#: |
CMPDM7002AG BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N-CH 60V 0.28A SOT-23 |
More Detail: | N-Channel 60V 280mA (Ta) 350mW (Ta) Surface Mount ... |
DataSheet: | CMPDM7002AG BK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.59nC @ 4.5V |
Vgs (Max): | 40V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 350mW (Ta) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The CMPDM7002AG BK is a field-effect transistor (FET) designed by N-channel MOSFET manufacturer NXP Semiconductors. It is a single-channel device meant as a low-power solution for applications such as voltage regulation in low-power applications, load sensing and power protection.
The CMPDM7002AG BK is essentially a combination of two MOSFETS, an N-channel and a P-channel, in the same package. The N-channel part of the CMPDM7002AG BK operates primarily as an active load, while the P-channel serves as a buffer stage. The result is a device with a low-threshold voltage rating and a low on-state resistance (RDS_on) of only 5.5 mOhm.
The CMPDM7002AG BK is suitabile for use in a variety of applications including; DC-DC converters, low-power power supplies, motor control, and load switching. The device operates with a supply voltage range of 4.5V to 20V and can handle power loads up to 5.5V at 10A.
The CMPDM7002AG BK makes use of a gate-source voltage field effect to control its operation. The gate source voltage (VGS) applied to the input of the device determines the current that can be conducted through it. A higher voltage increases the conductivity while a lower voltage decreases it. The current flow is proportional to the amount of voltage applied, allowing the device to be used effectively in a variety of applications.
In addition to its low power consumption, the CMPDM7002AG BK has several other advantages over conventional FETs. Firstly, the device has an low cut-off frequency of 15MHz, meaning it can be used more reliably at higher frequencies than other devices. Secondly, its symmetric output drive characteristics mean that it can be operated in both high and low power modes, giving designers additional flexibility.
As an industry standard, the CMPDM7002AG BK has passed several rigorous tests demonstrating its reliability and durability. It is also compliant with MIL-STD-751c voltage, temperature and humidity requirements, further demonstrating its reliability and stability. This allows it to be used in harsh industrial and automotive environments.
In conclusion, the CMPDM7002AG BK is a reliable, low-power, single-channel FET device with a low-threshold voltage rating and a low on-state resistance. It is designed to offer a variety of advantages over traditional FETs, including a low cut-off frequency, symmetric output drive characteristics, and compliance with MIL-STD-751c requirements. Its wide range of applications makes it an ideal solution for DC-DC converters, low-power power supplies, motor control, and load switching.
The specific data is subject to PDF, and the above content is for reference
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