CPC5602CTR Allicdata Electronics
Allicdata Part #:

CLA298TR-ND

Manufacturer Part#:

CPC5602CTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS Integrated Circuits Division
Short Description: MOSFET N-CH 350V 5MA SOT-223
More Detail: N-Channel 350V 5mA (Ta) 2.5W (Ta) Surface Mount SO...
DataSheet: CPC5602CTR datasheetCPC5602CTR Datasheet/PDF
Quantity: 16000
Stock 16000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
Vgs(th) (Max) @ Id: --
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Description

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CPC5602CTR is a type of field-effect transistor (FET). FETs are solid state devices that are used for switching and regulating current in circuits and in certain applications, they provide amplifying capabilities. The CPC5602CTR is composed of an integrated, easily-configured, self-contained system that includes an N-channel MOSFET, gate driver and ESD protection circuit. This combination simplifies the design of circuits requiring bidirectional low- and high-side switches.

The CPC5602CTR has a p-type metal-oxide semiconductor field-effect transistor structure with an insulated gate. It consists of a source, a gate and a drain, connected to a single silicon crystal. The source and drain operate as source and sink for charge carriers and the gate controls the flow of current between the source and drain. The term floating implies that the gate of the device is unpowered, meaning that the gate has no charge; this means current can only flow from the source to the drain when voltage is applied to the gate.

As a single FET, the CPC5602CTR is capable of switching bidirectional, low- and high-side current in both polarities. The device is capable of controlling high-speed switching, making it suitable for high-frequency switching applications such as power factor correction (PFC) circuits, motor control applications, and high-efficiency power switching. The ESD protection circuit included with the CPC5602CTR provides protection against electrostatic discharge (ESD) damage.

In the case of battery-powered applications, the CPC5602CTR has excellent low power consumption characteristics and can be used to collect and analyze data in situations where it may be difficult to access power sources. Its low device resistance minimizes the heat generated during switching operations and helps to exclude thermal errors. The other advantage is its ease of programming and operation, which reduces design complexity and enhances system reliability.

The CPC5602CTR is an excellent choice for both large and small volume signa l processing operations. Its flexibility, small size, and integration capabilities make it ideal for portable applications like hand-held tools and devices. Its high-speed switching capability further enhances its utility for switching and data collection applications. In addition, the temperature-sensitive nature of the CPC5602CTR makes it ideal for temperature controls, allowing the user to rapidly adjust the desired set point and make accurate temperature control settings.

Overall, the CPC5602CTR is an ideal single FET solution for various types of applications. Its self-contained features and its easy reconfiguration capabilities make it a preferred choice for many industrial and commercial applications. Its low power consumption, small size, and temperature-sensitive Nature make it a perfect fit for battery-powered operations. Its fast switching ability and protection features offer users the benefit of improved accuracy and reliability. Finally, the CPC5602CTR is a great option for portable applications, making it an excellent choice for both high-volume and low-volume signal processing operations.

The specific data is subject to PDF, and the above content is for reference

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