CPDU3V3UP

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TVS-Diodes (Transient Voltage Suppression Diodes) are usually small, high-power packaging diodes used to protect sensitive electronic devices and circuits from voltage overloads. The CPDU3V3UP, commonly referred to as a unidirectional 3.3V diode, is a robust ultra-low capacitance diode used to protect high-speed data lines/ports from electrostatic discharges (ESDs).

Application Field

The CPDU3V3UP is popularly used in communication products, medical equipment, USB ports, digital displays, memory cards, and various other circuits which require ESD and transient protection. The CPDU3V3UP line of diode components also offers a wide temperature range of -40℃ to +125℃.

The CPDU3V3UP high speed diode line is engineered to protect data lines against electrostatic discharge (ESD) per the Human Body Model (HBM) of IEC 61000-4-2, up to +/-8 kV contact discharge and +/-15kV air-gap discharge. It is also designed to offer ESD protection against rapid edge rate transient events, per the 25A, 8/20µs waveform, as defined in IEC 61000-4-4.

Work Principle

CPDU3V3UP uses silicon avalanche technology chip. When a positive ESD surge is applied, avalanche breakdown kicks in, allowing current to flow through the device. When the polarity of the ESD voltage is reversed, the breakdown is reversed and the diode is ready to protect the sensitive circuit from the subsequent surge. The CPDU3V3UP also has a low capacitance, allowing it to is also low enough to allow for robust protection of high speed data ports.

The chip design of the CPDU3V3UP is extremely critical as it is relying on specific and narrow operating conditions. The breakdown voltages of CPDU3V3UP chips are laser trimmed and tested to ensure they meet the 3.3V +/-5% breakdown specification and IEC 61000-4-2 surge protection guidelines. It has a very low capacitance range of 0.7pF to 0.9pF, which ensures the diodes can protect high speed data in small devices.

The structure of the CPDU3V3UP is dynamic. It is designed to be bi-directional and implements two or more CPDU3V3UP components in series to provide ESD protection for both polarities, which improves the reliability and the robustness of the CPDU3V3UP.

The CPDU3V3UP also uses a common opposing electrode structure, which prevents the diode die from being damaged during ESD tests. This significantly enhances its performance and reliability. The opposing electrode also has a unique structure to assist in maintaining the breakdown voltage as specified.

The CPDU3V3UP also has an alpha power dissipating element that dissipates any excess energy (Alpha=1.1Ω), thus ensuring that the gate oxide is not damaged. This ensures superior protection and performance.

In summary, the CPDU3V3UP is a robust, ultra-low capacitance, bi-directional diode, designed to provide high-speed ESD and transient protection for sensitive electronic devices and circuits. It is engineered to protect data lines against electrostatic discharge and rapid edge rate transient events, per the international safety standards.

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