![CSD75207W15 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 296-40008-2-ND |
Manufacturer Part#: |
CSD75207W15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2P-CH 3.9A 9DSBGA |
More Detail: | Mosfet Array 2 P-Channel (Dual) 3.9A 700mW Surfac... |
DataSheet: | ![]() |
Quantity: | 15000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | 3.9A |
Rds On (Max) @ Id, Vgs: | 162 mOhm @ 1A, 1.8V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 595pF @ 10V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 9-UFBGA, DSBGA |
Supplier Device Package: | 9-DSBGA |
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.The CSD75207W15 is a FET (Field Effect Transistor) array integrated circuit with two N-channel enhancement mode MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) in a single package. The device comes in a 7 mm x 5 mm, lead-free RoHS Compliant (Restriction of Hazardous Substances) SOIC (Small Outline Integrated Circuit) package that, in turn, has a low thermal resistance with a compact footprint, allowing for efficient power cycling and easy installation in a variety of applications.
Application Field
The CSD75207W15 Field Effect Transistor Array IC is a versatile IC and is widely used in various applications ranging from industrial, automotive and consumer segments. These applications generally include motor control, switching power supplies and battery management, automotive power management, grid computing and displays, portable device charging, and USB chargers. With its features such as integrated resistors and Schottky diodes, current sensing, voltage and temperature sensing, the CSD75207W15 can also be utilised for power-management solutions.
Working Principle
The CSD75207W15 Field Effect Transistor Array IC consists of two N-Channel Enhancement Mode MOSFETs which operate in the linear region, that is in the saturation or ohmic region, depending on the gate-source voltage (Vgs) to source voltage (Vds) relationship. The Gate-Source voltage of this type of FET is used to turn on and off the flow of current through the channel, while the Source and Drain voltages determine the amount of current flowing through the channel. When the Gate-Source voltage of the FET is more positive than the Source voltage, the FET is said to be “on”; however, when the Gate-Source voltage is less than that of the Source voltage, the FET is said to be “off”.
In the CSD75207W15 Field Effect Transistor Array IC, the MOSFETs are configured to form two N-type Half-Bridge Circuits. This means that the two FETs are connected in such a way that either side of the load can be connected to either the positive or negative input from the power supply, allowing for the switching of the voltage across the load. By controlling the Gate-Source voltages of the two FETs, the IC can be used to switch the voltage applied to the output of the half-bridge circuits.
The CSD75207W15 Field Effect Transistor Array IC also has a number of integrated components such as the resistors, Schottky diodes, current sensing, and temperature sensing, which are used to enhance the current and voltage sensing capabilities of the device. The integrated components allow for better protection against voltage spikes and current overloading, as well as more accurate current and temperature measurements.
Overall, the CSD75207W15 Field Effect Transistor Array IC is an efficient, cost effective and versatile integrated circuit that can be used for a variety of applications. Its integrated components make it the ideal choice for applications requiring power-management solutions that require accurate current and temperature measurements, as well as protection against voltage spikes and current overloading.
The specific data is subject to PDF, and the above content is for reference
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