CSD75301W1015

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The CSD75301W1015 is an advanced array of field-effect transistors manufactured by semiconductor company ON Semiconductor. This sophisticated array of devices is built upon the framework of field effect transistors (FET) and metal-oxide-semiconductor field effect transistors (MOSFET), which are both high-speed switching devices designed to regulate electrical signals. The CSD75301W1015 is an array, meaning it contains multiple devices integrated into a single package, in this case four individual N-channel enhancement mode MOSFETs. This package is an ideal solution for applications requiring multiple switching and control capabilities.

The CSD75301W1015 works by controlling the flow of electric current between source and drain. A MOSFET is a type of FET, with a gate, source and drain terminal, and the device works by triggering a change in the conductance between the terminals. The gate terminal is used to control the conductance, and when correctly configured, the device can be incredibly efficient at controlling electric signals. A particularly useful feature of MOSFETs is their low power requirements, allowing them to control signals while consuming minimal power.

The capability of the CSD75301W1015 is enhanced by the use of Drain-Source On-Resistance (RDson). This feature ensures that the devices’ performance is consistently stable and reliable even under certain conditions such as high temperatures, and it also reduces the amount of power needed to power the devices. In addition, the operating temperature range for the CSD75301W1015 is -40°C to 150°C.

The CSD75301W1015 is an ideal solution for multiple low and high power applications, such as higher current switch modes, motor controls, current limiters, and voltage clamping. Its advanced features make it even more useful for applications needing higher accuracy and lower resistance compared to standard MOSFETs. In addition, the array of devices is suitable for a wide range of solutions, such as radio equipment, portable computers, electric vehicles and power supply controllers.

The CSD75301W1015 is designed with an advanced version of an enhancement mode MOSFET, offering improved switching performance, increased signal strength and enhanced signal stability. This is achieved by providing an optimal balance of gate threshold voltage, gate-source capacitances and drain-source on-resistance. The on-resistance capabilities allow for lower losses and improved reliability, making it suitable for a wide range of power applications. With the on-resistance, the devices can deliver up to a peak current of 2.8A, with a gate-source voltage of 2.5V.

The four N-Channel Enhancement mode MOSFETs contained in the CSD75301W1015 array are designed to be active at the same time, and thus can contribute toward improved efficiency and reduced overall power consumption. This array is particularly suited for applications that require multiple devices operating simultaneously. It has a fast switching time and a low input capacitance, contributing toward improved signal-to-noise ratio. Each of the four devices has a separate gate control electrode to deliver precise control.

The CSD75301W1015 is an advanced array of field-effect transistors from ON Semiconductor, which can provide precise control and improved switching performance for multiple applications with low power consumption. Its four separate N-Channel Enhancement mode MOSFETs are designed to operate in parallel, with enhanced gate threshold voltage, gate-source capacitances, and drain-source on-resistance for improved signal stability and current regulation. With its wide operating temperature range, high peak current and high on-resistance capabilities, this device is optimal for use in radio equipment, portable computers, electric vehicles and power supply controllers, among other applications.

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