| Allicdata Part #: | 296-38339-2-ND |
| Manufacturer Part#: |
CSD75208W1015 |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET 2P-CH 20V 1.6A 6WLP |
| More Detail: | Mosfet Array 2 P-Channel (Dual) Common Source 20V ... |
| DataSheet: | CSD75208W1015 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.16000 |
| 10 +: | $ 0.15520 |
| 100 +: | $ 0.15200 |
| 1000 +: | $ 0.14880 |
| 10000 +: | $ 0.14400 |
| Series: | NexFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 P-Channel (Dual) Common Source |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A |
| Rds On (Max) @ Id, Vgs: | 68 mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 10V |
| Power - Max: | 750mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-UFBGA, DSBGA |
| Supplier Device Package: | 6-DSBGA |
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The CSD75208W1015 is an array of discrete N-Channel metal-oxide-semiconductor transistors (MOSFETs) designed for a wide variety of applications, including digital control and power devices. The array consists of eight individual MOSFETs, each of which is housed in a compact 8-pin surface-mount package (DIP). This device has a wide range of operating temperatures and is rated up to 75V, giving it an operating ra-nge of 0-75V.
The use of this device is well suited for a variety of digital control circuitry and power management applications, including motor control and switching circuits. This device is also suitable for use in high power, high frequency switching applications due to its high-speed switching characteristics. It can be used in high current density applications such as class D audio amplifiers, switching power supplies, and high voltage power distribution systems. Additionally, this device can be used in lighting applications, where its fast switching capabilities make it well-suited for dimming applications.
The internal architecture of the CSD75208W1015 consists of a high-density submicron technology that provides improved performance, increased power dissipation, and higher operating temperatures than traditional MOSFET arrays. This design also helps reduce the number of pins required, helping to improve quality and reliability. The device also features logic-level gate drive and on-resistance matching to reduce power dissipation and improve efficiency.
The working principle of the CSD75208W1015 is much like any other MOSFET array. When the gate terminal is driven with a low voltage, the source-drain channel is closed, preventing current flow. However, when a high voltage is applied to the gate terminal, the source-drain channel is opened, allowing current to flow between the source and the drain terminals. The device is designed to provide a low gate threshold voltage, allowing for efficient switching and allowing for lower power consumption.
The CSD75208W1015 is in an ideal choice for applications that require high power and high switching speed. This device is well suited for a variety of applications, including motor control and switching circuits, class D audio amplifiers, switching power supplies, and high voltage power distribution systems. This device is also an ideal choice for lighting applications, due to its fast switching capabilities, making it well-suited for dimming applications.
The specific data is subject to PDF, and the above content is for reference
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CSD75208W1015 Datasheet/PDF