CSD75211W1723 Allicdata Electronics
Allicdata Part #:

296-27598-2-ND

Manufacturer Part#:

CSD75211W1723

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET 2P-CH 20V 4.5A 12DSBGA
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 4.5A 1.5W Surf...
DataSheet: CSD75211W1723 datasheetCSD75211W1723 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Base Part Number: CSD75211
Supplier Device Package: 12-DSBGA
Package / Case: 12-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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CSD75211W1723 is a product family of N-Channel PowerTrench MOSFET. It is designed to deliver low RDS(on), low gate charge and high-performance switching in 4.2mm of total gate length. CSD75211W1723 devices have a wide range of applications in various electronic fields.

The main application field of CSD75211W1723 is wide-channel power FETs which includes Automotive Load Switches, Power Management, Infotainment systems, Solenoid Driver, Peripheral IC, Power Distribution IC and more. This MOSFET family has an integrated charge performance along with low Qg and low RDS (on) for high-speed switching, making it suitable for high-performance automotive applications. The device family has a wide range of source-drain voltage of 14V to 60V and RDS (on) ranging from 5.2Ω to 256 Ω, that make it suitable for a broad range of current requirements. Also, the device has ESD protection of up to 2kV which suits it for automotive systems.

CSD75211W1723 can also be used for Gate Drivers, Linear Regulators, Level Shifters and more. It is continuously evolving and finding better ways for application in the electronic field.

The working principle of CSD75211W1723 is similar to that of any other FETs (Field Effect Transistors). It works with a gate, drain and source. When a voltage is applied to the gate, it causes an electric field which can control the incoming current flow between drain and source. When the voltage applied to the gate is low, no current flows between drain and source and hence, the transistor will be in cut off mode. When the voltage at the gate increases, current begins to flow between drain and source, and the transistor enters the linear or saturation region. When the drain-source voltage is low, the transistor stays in the linear region, and when the drain-source voltage is high, the transistor switches to the saturation region. The PowerTrench architecture of the CSD75211W1723 allows it to switch between Cut-Off, Linear and Saturation regions of operation quickly and efficiently.

Another important feature of the CSD75211W1723 is its SOA (Safe Operating Area) protection. SOA protection limits the maximum drain current to a safe level during switching and prevents the device from burning out.

Overall, the CSD75211W1723 is a great choice for medium and high-current switching applications due to its low RDS (on) and low gate charge along with its SOA protection.

The specific data is subject to PDF, and the above content is for reference

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